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Effect Of pH On Chemical-Mechanical Polishing Of Copper And Tantalum

Published online by Cambridge University Press:  18 March 2011

Anurag Jindal ,
Ying Li  and
S. V. Babu
Anurag Jindal
Affiliation:
Departments of Chemical and Mechanical
Ying Li
Affiliation:
Engineering Center For Advanced Materials Processing Clarkson University, Potsdam, NY 13699
S. V. Babu
Affiliation:
Departments of Chemical and Mechanical
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Abstract

pH has a strong effect on the polish rates of copper (Cu) and tantalum (Ta) [1]. In this paper, removal rates of Cu and Ta using aqueous slurries containing alumina and silica abrasives in H2O2-glycine solution are studied at varying pH values. It is observed that variation in the Cu and Ta removal rates is a direct result of the change in surface characteristics of the films. Surface characteristics such as presence/absence of a passivating layer and hardness of such layer vary with pH and hence result in removal rate variation. It is also shown that a favorable Cu/Ta polish rate selectivity can be obtained by adjusting the pH of the slurry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 671: Symposium M – Chemical-Mechanical Polishing 2001–Advances and Future Challenges , 2001 , M6.8
Copyright
Copyright © Materials Research Society 2001

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References

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