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Effect of Phosphorus-Doped Polysilicon Anneal on Thin Oxide Reliability as Probed with X-Ray Damage Characterization

Published online by Cambridge University Press:  22 February 2011

R. Nachman  and
F. Cerrina
R. Nachman
Affiliation:
Center for X-ray Lithography (CXrL) and Electrical and Computer Engineering Department, University of Wisconsin-Madison
F. Cerrina
Affiliation:
Center for X-ray Lithography (CXrL) and Electrical and Computer Engineering Department, University of Wisconsin-Madison
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Abstract

In this paper we address the degradation of oxide reliability after annealing the phosphorusdoped polysilicon of MOS structures. The oxide reliability was studied in terms of X-ray radiation sensitivity as well as breakdown characteristics.

We found that annealing the polysilicon increased the radiation sensitivity of the gate oxide. We believe that this increase is a result of the phosphorus out-diffusion from the polysilicon into the oxide and a result of the creation of phosphorus related traps in the oxide bulk. We also found that the oxide charge to breakdown (Qbd) degradation correlates well with the density of the phosphorus in the oxide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 63
Copyright
Copyright © Materials Research Society 1994

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References

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