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Effect of Pulse Duration on the Annealing of Ion Implanted Silicon With A XeCl Excimer Laser And Solar Cells

Published online by Cambridge University Press:  15 February 2011

R. T. Young ,
J. Narayan ,
W. H. Christie ,
G. A. van der LEEDEN ,
D. E. Rothe  and
R. L. Sandstrom
R. T. Young
Affiliation:
Helionetics, Inc., San Diego, CA 92123, and Oak Ridge National Laboratory **, Oak Ridge, TN 37830
J. Narayan
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
W. H. Christie
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
G. A. van der LEEDEN
Affiliation:
Helionetics, Inc., San Diego, CA 92123
D. E. Rothe
Affiliation:
Helionetics, Inc., San Diego, CA 92123
R. L. Sandstrom
Affiliation:
Helionetics, Inc., San Diego, CA 92123
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Abstract

The advantages of pulsed excimer lasers for semiconductor processing are reviewed. Studies of XeCl excimer laser annealing with pulses of 25 and 70 nsec duration and energy densities in the range from 0.5–3.0 J/cm2 are discussed. The annealing characteristics are described in terms of the results of melt depth, dopant profile spreading, and electrical properties (sheet resistivity, diode characteristics) measurements. Solar cells with efficiencies as high as 16.7% AMI have been fabricated using glow discharge implantation and XeCl laser annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 401
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

Research sponsored jointly by the Solar Energy Research Institute under contract BS–0–9078–1 and by Helionetics, Inc.

**

Operated by Union Carbide Corporation under contract W–7405–eng–26 with the U.S. Department of Energy.

+

Analytical Chemistry Division

++

Present address: Guest scientist, Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830

References

REFERENCES

1.Young, R. T., van der Leeden, G. A., Narayan, J., Christie, W. H., Wood, R. F., Rothe, D. E., and Levatter, J. I., IEEE Elec. Dev. Lett. EDL–3, 280 (1982).Google Scholar
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