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Effect of SiO2 Capping Layer on a Laser Crystallization of a-Si Thin Film

Published online by Cambridge University Press:  01 February 2011

Myung-Koo Kang ,
Hyun Jae Kim ,
Sook Young Kang ,
Su-Kyung Lee ,
Chi-Woo Kim  and
Kyuha Chung
Myung-Koo Kang
Affiliation:
LTPS Group, Flat Panel Display R&D Team, Samsung Electronics Co., Yongin-City, Gyeonggi-Do, Korea 449-711
Hyun Jae Kim
Affiliation:
LTPS Group, Flat Panel Display R&D Team, Samsung Electronics Co., Yongin-City, Gyeonggi-Do, Korea 449-711
Sook Young Kang
Affiliation:
LTPS Group, Flat Panel Display R&D Team, Samsung Electronics Co., Yongin-City, Gyeonggi-Do, Korea 449-711
Su-Kyung Lee
Affiliation:
LTPS Group, Flat Panel Display R&D Team, Samsung Electronics Co., Yongin-City, Gyeonggi-Do, Korea 449-711
Chi-Woo Kim
Affiliation:
LTPS Group, Flat Panel Display R&D Team, Samsung Electronics Co., Yongin-City, Gyeonggi-Do, Korea 449-711
Kyuha Chung
Affiliation:
LTPS Group, Flat Panel Display R&D Team, Samsung Electronics Co., Yongin-City, Gyeonggi-Do, Korea 449-711
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Abstract

Effect of SiO2 capping layer(C/L) on recrystallization of amorphous Si (a-Si) film was investigated. When a thick C/L over 500 Å was deposited on an a-Si film before crystallization, fine p-Si grains less than 100nm were obtained at full range of energy density window. However, when a thin C/L below 200 Å was used, Si-melt spouted out through C/L at over critical energy density. When Si-melt started spouting, abrupt change of grain size also occurred. These large grains could be explained by a non-uniformity of heat flow caused by Si-melt spouting. With this polycrystalline Si (p-Si) material having appreciable grain size protected by C/L, fabrication of low-cost Low Temperature Poly Si (LTPS) without additional cleaning of p-Si surface could be successfully developed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A17.3
Copyright
Copyright © Materials Research Society 2003

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