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The Effect of Sputtering Conditions on Submicron Contact Filling Using Laser Planarization

Published online by Cambridge University Press:  25 February 2011

C. Yu ,
T.T. Doan ,
S. Kim  and
G.S. Sandhu
C. Yu
Affiliation:
Micron Technology Inc., 2805 East Columbia Road, Boise, ID 83706
T.T. Doan
Affiliation:
Micron Technology Inc., 2805 East Columbia Road, Boise, ID 83706
S. Kim
Affiliation:
Micron Technology Inc., 2805 East Columbia Road, Boise, ID 83706
G.S. Sandhu
Affiliation:
Micron Technology Inc., 2805 East Columbia Road, Boise, ID 83706
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Abstract

The effect of sputtering conditions of Al alloy films on the ability to fill submicron contact/vias by laser planarization has been investigated. A significant improvement in the process window (complete contact filling to optical ablation) has been observed by using high temperature and/or bias sputtering. In general, the process window increased with the increasing deposition temperature and substrate bias voltage. For 0.9 μm diameter contacts of aspect ratio ∼ 1, the process window for contact filling by AlSi(l%)Cu(0.5%) increased from 5% for standard deposition parameters to a record high 30% by using the optimized sputtering conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 203: Symposium D – Electronic Packaging Materials Science V , 1990 , 357
Copyright
Copyright © Materials Research Society 1991

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References

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