Hostname: page-component-6bf8c574d5-9nwgx Total loading time: 0 Render date: 2025-02-22T16:58:35.384Z Has data issue: false hasContentIssue false
  • English
  • Français

The Effect of Strain and Strain-Gradients on the CrystallisationKinetics of S1−xGex Alloy Layers

Published online by Cambridge University Press:  15 February 2011

Per Kringhøj ,
Robert G. Elliman  and
John L. Hansen
Per Kringhøj
Affiliation:
Electronic Materials Engineering Department, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT 0200, Australia.
Robert G. Elliman
Affiliation:
Electronic Materials Engineering Department, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT 0200, Australia.
John L. Hansen
Affiliation:
Institute of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C, Denmark
Get access

Abstract

A comparison of strain relief in SiGe alloy layers during high temperatureannealing and solid phase epitaxial crystallisation (SPEC) has shown thatlayers which are thermodynamically stable are also fully strained followingSPEC, whereas metastable layers that relax at high temperatures also relaxduring SPEC. This is illustrated by the fact that a uniform SiGe layer withx=0.085 is stable during annealing at 1100°C for 60 sec and is fullystrained following SPEC. In contrast, a uniform layer with x=0.17, which wasfully strained as-grown by molecular beam epitaxy (MBE), is shown to relaxduring high temperature annealing and during SPEC.

A depth dependent SPEC velocity is observed for metastable layers, with adecrease in velocity as the alloy layer begins to crystallise and anincrease in velocity as strain relaxation proceeds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 461
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Williams, J.S., in Surface Modification and Alloying by Laser, Ion, and Electron Beams, (Plenum Press, NY, 1983). Chapter 5 (and references therein).Google Scholar
2. Olson, G.L. and Roth, J.A.. Mat. Res. Rep. 3, 1 (1988).Google Scholar
3. Chilton, B.T., Robinson, B.J., Thompson, D.A., Jackman, T.E., and Baribeau, J.-M., Appl. Phys. Lett. 54, 42 (1989).Google Scholar
4. Paine, D.C., Evans, N.D., and Stoffel, N.G., J. Appl. Phys. 70, 4278 (1991).Google Scholar
5. Paine, D.C., Howard, D.J., Stoffel, N.G. and Horton, J.A.. J. Mater. Res. 5, 1023 (1990).Google Scholar
6. Hong, Q.Z., Zhu, J.G., Mayer, J.W., Xia, W., and Lau, S.S., J. Appl. Phys. 71, 1773 (1992).Google Scholar
7. Lee, C., Haynes, T.E., and Jones, K.S., Appl. Phys. Lett. 62, 501 (1993).Google Scholar
8. Atzmon, Z., Eizenberg, M., Revesz, P., Mayer, J.W., Hong, S.Q., and Schaffler, F., Appl. Phys. Lett. 60 2243 (1992).Google Scholar
9. Pai, C.S., Lau, S.S., Suni, I., and Csepregi, L., Appl. Phys. Lett. 47, 1214 (1985).Google Scholar
10. Thomsen, E.V., Nylandsted Larsen, A., Hansen, J.L., Kringhøj, P., Shiryaev, S.Y., and Weyer, G., 17th International Conference on Defects in Semiconductors, (Gmunden, Austria, July 1993).Google Scholar
11. Kringhøj, P. and Elliman, R.G., to be published.Google Scholar