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Effect of Ultra-Dilute RCA Cleans on the Integrity of Thin Gate Oxides

Published online by Cambridge University Press:  10 February 2011

Tushar Dhayagude ,
Weidong Chen ,
Mohsen Shenasa ,
David Nelms  and
Mike Olesen
Tushar Dhayagude
Affiliation:
National Semiconductor Corp., Advanced Technology Group, Santa Clara, CA 95052
Weidong Chen
Affiliation:
National Semiconductor Corp., Advanced Technology Group, Santa Clara, CA 95052
Mohsen Shenasa
Affiliation:
National Semiconductor Corp., Advanced Technology Group, Santa Clara, CA 95052
David Nelms
Affiliation:
VERTEQ Inc., Santa Ana, CA 92705
Mike Olesen
Affiliation:
VERTEQ Inc., Santa Ana, CA 92705
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Abstract

Comparative studies on the effect of Ultra-dilute RCA cleans, chemical ratios in excess of 300:1, and Dilute RCA cleans, chemical ratios around 50:1, on the integrity of thin gate oxides have been performed. Ultra-dilute RCA chemistries have shown particle removal efficiency, metallic contamination removal, surface roughness, Qbd, BVox and defect density equivalent to those obtained using dilute RCA chemistries. Furthermore ultra-dilute chemistries use less chemical leading to shorter rinse times and thus increased throughput as compared to the dilute RCA chemistries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 217
Copyright
Copyright © Materials Research Society 1997

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Footnotes

1

Fujitsu Microelectronics, San Jose, California 95134

References

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