Hostname: page-component-cd9895bd7-jn8rn Total loading time: 0 Render date: 2024-12-28T20:29:10.142Z Has data issue: false hasContentIssue false

Effective Refractory Metal Alloy Barrier Layer for High Temperature Microelectronic Device Application

Published online by Cambridge University Press:  21 December 2012

A.V. Adedeji*
Affiliation:
Department of Chemistry, Geology & Physics, Elizabeth City State University, 1704 Weeksville Road, Elizabeth City, NC 27909, USA
M.R. Ross
Affiliation:
Department of Chemistry, Geology & Physics, Elizabeth City State University, 1704 Weeksville Road, Elizabeth City, NC 27909, USA
N. Hamden
Affiliation:
Department of Chemistry, Geology & Physics, Elizabeth City State University, 1704 Weeksville Road, Elizabeth City, NC 27909, USA
A.K. Pradhan
Affiliation:
Center for Materials Research, Norfolk State University, 700 Park Avenue, Norfolk, VA 23504, USA
A.C. Ahyi
Affiliation:
Department of Physics, Auburn University, Auburn, AL 36849, USA
T. Isaacs-Smith
Affiliation:
Department of Physics, Auburn University, Auburn, AL 36849, USA
Get access

Abstract

The oxidation and diffusion of Molybdenum layer sputter-deposited on 2μm CVD diamond grown on silicon substrate has been studied. The Mo layer was protected by refractory metal silicide barrier layer. The samples were annealed in air ambient at 500°C over 30 hours. The oxidation of the samples was monitored with Rutherford Backscattering Spectroscopy (RBS). The effect of reactive sputtering of refractory silicide target in argon-nitrogen gas mixture (5% nitrogen by flow rate) on the barrier characteristics was investigated. The sheet resistivity of the barrier layer on SiC substrates as a function of annealing time in air at 500°C is reported. The surface structure and morphology of the refractory silicide films was determined with X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM).

Type
Articles
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Nicolet, M.-A. and Giauque, P.H., Highly metastable amorphous and near-amorphous ternary films, Microelectronic Engineering 55 (2001) 357367 10.1016/S0167-9317(00)00468-8CrossRefGoogle Scholar
Adedeji, A.V., Ahyi, A.C., Williams, J.R., Mohney, S.E. and Schofield, J., Solid State Electronics 54 (2010) 746–74010.1016/j.sse.2010.03.010CrossRefGoogle Scholar
Nicolet, M.-A., Thin Solid Films, 54 415 (1978)10.1016/0040-6090(78)90184-0CrossRefGoogle Scholar
Chen, J.S., Kolawa, E., Nicolet, M.-A., Ruiz, R.P., J. Appl. Phys. 32 (1993) 34143419 Google Scholar
Kolawa, E., Chen, J.S., Reid, J.S., Pokela, P.J., Nicolet, M.-A., J. Appl. Phys. 70 (3) (1991) 13691373 CrossRefGoogle Scholar
Reid, J.S., Ruiz, R.P., Kolawa, E., Chen, J.S., Madok, J., Nicolet, M.-A., Mater. Res. Soc. Symp. Proc. 260 (1992) 555560 10.1557/PROC-260-555CrossRefGoogle Scholar
Kacsich, T., Kolawa, E., Fleurial, J.P., Caillat, T., Nicolet, M.-A., J. Phys. D: Appl. Phys. 31 (19) (1998) 24062411 10.1088/0022-3727/31/19/007CrossRefGoogle Scholar
de Reus, R, Christensen, C., Weichel, S., Bouwstra, S., Janting, J., Eriksen, G.F., Dyrbye, K., Brown, T.R., Krog, J.P., Jensen, O.S., Gravesen, P., Microelectron. Reliab. 38 (6-8) (1998) 12511260 10.1016/S0026-2714(98)00149-8CrossRefGoogle Scholar
Fischer, D., Scherg, T., Bauer, J.G., Schulze, H.-J., Wenzel, C., Microelectronic Engineering 50 (2000) 459464 10.1016/S0167-9317(99)00315-9CrossRefGoogle Scholar
Linder, C., Dommann, A., Staufert, G., Nicolet, M.-A., Sensors Actuators A 61 (1997) 387391 10.1016/S0924-4247(97)80294-4CrossRefGoogle Scholar
Loura, C., Cavaleiro, A., Thin Solid Films 336 (1998) 16 Google Scholar
Dauksher, W.J., Resnick, D.J., Cummings, K.D., Baker, J., Gregory, R.B., Theodore, N.D., Chan, J.A., Johnson, W.A., Mogab, C.J., Nicolet, M.-A., Reid, J.S., Vac, J.. Sci. Technol. B 13 (6) (1995) 31033106 CrossRefGoogle Scholar
van der Pauw, L.J., Phil. Tech. Rev. 20 220 (1958)Google Scholar