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Effects of Hydrogen on Nucleation of Islands During Si(001) Mbe Growth

Published online by Cambridge University Press:  15 February 2011

Kazuki Mizushima ,
Pavel Šmilauer  and
Dimitri D. Vvedensky
Kazuki Mizushima
Affiliation:
Central Research Institute, Mitsubishi Materials Corporation, Omiya, Saitama 330, Japan
Pavel Šmilauer
Affiliation:
HLRZ, KFA Jülich, 52425 Jülich, Germany and Institute of Physics, Cukrovarnická 10, 162 00 Praha 6, Czech Republic
Dimitri D. Vvedensky
Affiliation:
The Blackett Laboratory, Imperial College, London SW7 2BZ, United Kingdom
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Abstract

Kinetic Monte Carlo simulations with two species (Si and H) have been performed to identify the mechanism behind the H-induced creation of a strongly temperature-dependent high density of Si islands in the temperature range of 300–550 K during molecular-beam epitaxy on Si(001) surface. A model is proposed to explain this effect as a result of an activated exchange between H and Si at Si island edges.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 440: Symposia CA – Structure and Evolution of Surfaces , 1996 , 141
Copyright
Copyright © Materials Research Society 1997

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