Hostname: page-component-6bf8c574d5-b4m5d Total loading time: 0 Render date: 2025-02-22T08:13:10.087Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Substrate Orientation on the Spontaneous Ordering of GaAsSb Epilayers Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  01 February 2011

Brian P. Gorman ,
Andrew G. Norman ,
Reiko Lukic-Zrnic ,
Terry D. Golding  and
Chris L. Littler
Brian P. Gorman
Affiliation:
Department of Physics, University of North Texas, Denton, TX 76203, U.S.A.
Andrew G. Norman
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, U.S.A.
Reiko Lukic-Zrnic
Affiliation:
Department of Physics, University of North Texas, Denton, TX 76203, U.S.A.
Terry D. Golding
Affiliation:
Department of Physics, University of North Texas, Denton, TX 76203, U.S.A.
Chris L. Littler
Affiliation:
Department of Physics, University of North Texas, Denton, TX 76203, U.S.A.
Get access

Abstract

Spontaneous atomic ordering is investigated in a series of GaAs1−xSbx epilayers (0.51 < x < 0.71) grown by molecular beam epitaxy (MBE) on GaAs substrates with surface orientations of (001), (001) – 8° toward (111)A, (001) – 8° toward (111)B, (115)A, (115)B, (113)A, and (113)B. Atomic ordering in these epilayers was observed from a decrease in the energy gap measured by Fourier transform infrared (FTIR) absorption spectroscopy and corroborated by superlattice reflections in transmission electron diffraction and Raman spectroscopy. Contrary to previous investigations of ordering in III-V alloys, a marked energy gap reduction corresponding to CuPt-B type ordering is observed in the GaAs1−xSbx grown on (111)A-type orientations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 794: Symposium T – Self-Organized Processes in Semiconductor Heteroepitaxy , 2003 , T10.6
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Murgatroyd, I. J., Norman, A. G., Booker, G. R., and Kerr, T. M., Proc. XIth Int. Conf. on Electron Microscopy, Kyoto, Japan, 1986, J. Electron. Microsc. 35, 1497 (1986).Google Scholar
2. Ihm, Y. E., Otsuka, N., Klem, J., and Morkoc, H., Appl. Phys. Lett. 51, 2013 (1987).Google Scholar
3. Murgatroyd, I. J., Norman, A. G., and Booker, G. R., J. Appl. Phys. 67, 2310 (1990).Google Scholar
4. Zhong, Z., Li, J. H., Kulik, J., Chow, P. C., Norman, A. G., Mascarenhas, A., Bai, J., Golding, T. D., and Moss, S. C., Phys. Rev. B 63, 033314 (2001).Google Scholar
5. Batyrev, I. G., Norman, A. G., Zhang, S. B., and Wei, S.-H., Phys. Rev. Lett. 90, 026102–1 (2003).Google Scholar
6. Wei, S.-H. and Zunger, A., Appl. Phys. Lett. 56, 662 (1990).Google Scholar
7. Phillips, B. A., Norman, A. G., Seong, T. Y., Mahajan, S., Booker, G. R., Skowronski, M., Harbison, J. P., and Keramidas, V. G., J. Cryst. Growth, 140, 249 (1994).Google Scholar
8. Zhang, S. B., Froyen, S., and Zunger, A., Appl. Phys. Lett., 67, 3141 (1995).Google Scholar
9. Gorman, B. P., Norman, A. G., Lukic-Zrnic, R., Moutinho, H., Golding, T. D., Birdwell, A. G. and Littler, C. L., J. Appl. Phys., submitted (2003).Google Scholar
10. Lukic-Zrnic, R., Gorman, B. P., Cottier, R. J., Golding, T. D., Littler, C. L., and Norman, A. G., J. Appl. Phys., 92, 6939 (2002).Google Scholar
11. Zunger, A. and Mahajan, S., Handbook on Semiconductors, edited by Moss, T. S. (Elsevier Science B. V., Amsterdam, 1994) p. 1399.Google Scholar
12. Wei, S. -H., Laks, D. B., and Zunger, A., Appl. Phys. Lett., 62, 1937 (1993).Google Scholar
13. Nahory, R. E., Pollack, M. A., DeWinter, J. C., and Williams, K. M., J. Appl. Phys. 48, 1607 (1977).Google Scholar
14. Cheong, H. M., Mascarenhas, A., Ernst, P., and Geng, C., Phys. Rev. B 56, 1882 (1997).Google Scholar
15. Gomyo, A., Kawata, S., Suzuki, T., Iijima, S., and Hino, I, Jpn. J. Appl. Phys. 28, L1728 (1989).Google Scholar
16. McGlinn, T. C., Krabach, T. N., Klein, M. V., Bajor, G., Greene, J. E., Kramer, B., Barnett, S. A., Lastras, A., and Gorbatkin, S., Phys. Rev. B 33, 8396 (1986).Google Scholar
17. Zhang, Y., Mascarenhas, A., and Wang, L. W., Phys. Rev. B 63, 201312 (2001).Google Scholar
18. Gomyo, A., Suzuki, T., Kobayashi, K., Kawata, S., Hotta, H., and Hino, I., NEC Res. Develop. 35, 134 (1994).Google Scholar