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The Effects of Surface and Interface Depletion Regions on the Photoconductivity of a-Si:H in Surface Cell Structures

Published online by Cambridge University Press:  26 February 2011

GN Parsons ,
C Kusano  and
G Lucovsky
GN Parsons
Affiliation:
Department of Physics, NC State Univ, Raleigh NC 27965–8202
C Kusano
Affiliation:
Hitachi Central Research Laboratory, Tokyo, Japan
G Lucovsky
Affiliation:
Department of Physics, NC State Univ, Raleigh NC 27965–8202
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Abstract

We have studied the optical, electrical and photoelectronic properties of a-Si:H thin films in surface cell structures. We have concluded that upward band bending in the form of depletion layers at the film surface and film oxide glass interface causes the electrical properties to display a thickness dependence. We find that the measured values of the quantum efficiency, mobility, lifetime product, hereafter nuT, also displays a thickness dependence. We show how the limiting bulk values for nuT and other electronic properties can be determined.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 589
Copyright
Copyright © Materials Research Society 1987

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References

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