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Electrical and Optical Properties of Oxygenated Microcrystalline Silicon (mc-Si:O:H)

Published online by Cambridge University Press:  25 February 2011

M. Faraji ,
Sunil Gokhale ,
S. M. Chaudhari ,
M. G. Takwale  and
S. V. Ghaisas
M. Faraji
Affiliation:
School of Energy Studies, Dept. of Physics, University of Poona
Sunil Gokhale
Affiliation:
School of Energy Studies, Dept. of Physics, University of Poona
S. M. Chaudhari
Affiliation:
School of Energy Studies, Dept. of Physics, University of Poona
M. G. Takwale
Affiliation:
School of Energy Studies, Dept. of Physics, University of Poona
S. V. Ghaisas
Affiliation:
Department of Electrical Science, University of Poona, Pune 411007, INDIA
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Abstract

Hydrogenated microcrystalline silicon with oxygen(mc-Si:O:H) is grown using radio frequency glow discharge method. Oxygen is introduced during growth by varying it's partial pressure in the growth chamber. The crystalline volume fraction ‘f’ and the crystallite size ‘δ’ are found to vary with the oxygen content. Results indicate that oxygen can etch the silicon surface when present in low amount while it forms a-SiO2-x with increasing contents. Optical absorption studies in the range of 2 to 3 eV suggest that the absorption coefficient ‘α’ lies in between the values of c-Si and a-Si:H.being closer to a-Si:H. The Hall mobility measurements for these samples indicate that for optimum oxygen contents the mobility as high as 35 cm2 V-1 sec-1 can be obtained. Results on I-V characteristics for p-i-n structure are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 699
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Kaiser, W., Phys. Rev., 105, 1751 (1957).Google Scholar
2. Markevich, V. P., Mkarenko, L. F. and Murin, L. L., in Materials Scienes Forum, Vol.38–41. (1989). pp 589–594, (Proceedings from International Conference on Defects in Semiconductors (ICDS-15), Budapest, Hungary, Aug 22–26, 1988).Google Scholar
3. Pancove, J. I., in Hydrogenated Amorphous Silicon Part D Devices and Applications, Semiconductors and Semi Metals Vo1.21 eds. Willardson, R.K. and Beer, A. C..(Academic Press Inc, Orlando, 1984) 439.Google Scholar
4. Monstakes, T. D., Matsuka, H. P. and Friedman, R., J. Appl. Phys. 58 983 (1985).Google Scholar
5. Faraji, M., Babras, S., Mirzapur, S., Agashe, C., Rajarshi, S., Dusane, R., and Ghaisas, S. V., Japanese J. Appl. Phys., 29 2080 (1989).Google Scholar
6. Hamakawa, Y. and Okameto, H., in Amorphous Semiconductors Technology and Devices Vol 16, edited by Hamakawa, Y., (OHM publication, North Holland) chapter 5Google Scholar
7. Asano, A., Appl. Phys. Lett. 56 533 (1990).Google Scholar
8. Cullity, B. D., Elements of X-Ray Diffraction (Addison-Wesley Publishing company, 1956).Google Scholar
9. Matsuda, A., J. Non-crystalline Solids. 59/60, 767 (1983).Google Scholar
10. Datta, J., Unaogu, A. L., Ray, Swati and Barua, A. K., J. Appl. Phys., 66, 4709 (1989).CrossRefGoogle Scholar
11. Seto, J. Y. W., J. Appl. Phys. 46, 5247 (1975).Google Scholar
12. Lucovsky, G. and Pollard, W. B. in The Physics of Hydrogenated Amorphous Silicon II Vol. 56, edited by, Joannopoulous, J. D. and Lucovsky, G. (Springei-Verlag, New York, 1984) chapter 7.Google Scholar
13. Singh, S. N., Das, B. K., Narula, R. C. and Jain, S. C. in Photo Voltaic Materials and Devices, edited by, Das, B. K. and Singh, S. N. (Wiley Eastern Limited 1985)chapter 2.Google Scholar