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Electrical Properties of β -FeSi2/Si Hetero-Diode Improved by Pulsed Laser Annealing

Published online by Cambridge University Press:  01 February 2011

Keiichi Tsuchiya ,
Noboru Miura ,
Hironaga Matsumoto ,
Ryotaro Nakano  and
Shin-ichiro Uekusa
Keiichi Tsuchiya
Affiliation:
Department of Electronics & Communication, School of Science & Technology, Meiji University, 1–1–1 Higashimita, Tama-ku Kawasaki 214–8571, Japan
Noboru Miura
Affiliation:
Department of Electronics & Communication, School of Science & Technology, Meiji University, 1–1–1 Higashimita, Tama-ku Kawasaki 214–8571, Japan
Hironaga Matsumoto
Affiliation:
Department of Electronics & Communication, School of Science & Technology, Meiji University, 1–1–1 Higashimita, Tama-ku Kawasaki 214–8571, Japan
Ryotaro Nakano
Affiliation:
Department of Electronics & Communication, School of Science & Technology, Meiji University, 1–1–1 Higashimita, Tama-ku Kawasaki 214–8571, Japan
Shin-ichiro Uekusa
Affiliation:
Department of Electronics & Communication, School of Science & Technology, Meiji University, 1–1–1 Higashimita, Tama-ku Kawasaki 214–8571, Japan
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Abstract

β-phase iron disilicide (β-FeSi2) was obtained on n-type silicon (111) substrate by using excimer laser annealing (ELA). β-phase crystal which have good electrical properties was grown within a narrow annealing condition such as energy density. All samples were annealed by excimer laser show n-type characteristic. Graded junction was formed in FeSi2/Si hetero diode.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 799: Symposium Z – Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications , 2003 , Z5.20
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

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