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Electrical Resistance Change with Crystallization in Si-Te Amorphous Thin Films

Published online by Cambridge University Press:  01 February 2011

Yuta Saito ,
Yuji Sutou  and
Junichi Koike
Yuta Saito
Affiliation:
rikkun39@hotmail.co.jp, Tohoku University, Department of Materials Science, Sendai, Japan
Yuji Sutou
Affiliation:
ysutou@material.tohoku.ac.jp, Tohoku University, Department of Materials Science, Sendai, Japan
Junichi Koike
Affiliation:
koikej@material.tohoku.ac.jp, Tohoku University, Department of Materials Science, Sendai, Japan
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Abstract

The electrical resistance change of amorphous SixTe100-x (x: 10-23) films during heating was investigated by a two-point probe method. The SixTe100-x films showed two-stage crystallization processes. The film was firstly crystallized to Te and subsequently crystallized to Si2Te3 with an electrical resistance drop. The first crystallization temperature Tx1st slightly increased with increasing Si content, while the second crystallization temperature Tx2nd was independent on the composition and was a constant temperature of 310 °C. In all films, the electrical resistance once increased in the temperature range from 250 to 295 °C before the crystallization of the Si2Te3. This temporal resistance increase could be explained by considering a formation of high-resistivity Si-rich amorphous phase.

Keywords

amorphousmemoryTe
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1251: Symposium H – Phase-Change Materials for Memory and Reconfigurable Electronics Applications , 2010 , 1251-H06-07
Copyright
Copyright © Materials Research Society 2010

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