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Electron-Transporting Thiophene-Based Semiconductors Exhibiting Very High Field Effect Mobilities

Published online by Cambridge University Press:  17 March 2011

Antonio Facchetti ,
Myung-Han Yoon  and
Tobin J. Marks
Antonio Facchetti
Affiliation:
Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208-3113, USA
Myung-Han Yoon
Affiliation:
Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208-3113, USA
Tobin J. Marks
Affiliation:
Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208-3113, USA
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Abstract

Organic semiconductors exhibiting complementary n-type carrier mobility are the key components for the development of the field of “plastic electronics”. We present here a novel series of oligothiophenes designed to improve performance and stability under electron- transporting conditions. Furthermore, the key structural features of these compounds allows additional modifications of the n-type conducting core to achieve material solubility and processability. Thin film transistor (TFT) devices were fabricated employing both vacuum- and solution-deposited semiconducting layers. Field-effect transistor measurements indicate that all the members of this new series are n-type semiconductors with mobilities and Ion:Ioff ratios approaching 1 cm2/(Vs) and 107, respectively. This family represents a key milestone in the design, understanding, and development of the next generation of highly efficient n-type OTFT components.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 814: Symposium I – Flexible Electronics 2004-Materials and Device Technology , 2004 , I12.2
Copyright
Copyright © Materials Research Society 2004

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