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Enhancing the Grain Size and {110} Texture of Polycrystalline Si Films By Seed Selection Through Ion Channeling: Implant-Dose Dependence

Published online by Cambridge University Press:  28 February 2011

Kenneth T-Y. Kung  and
Rafael Reif
Kenneth T-Y. Kung
Affiliation:
Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology, Cambridge, MA 02139
Rafael Reif
Affiliation:
Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

This work outlines an optimized seed selection through ion channeling (SSIC) process for enhancing the grain size and {110} texture of polycrystalline Si films grown by LPCVD on SiO2. These films, 0.44 μm thick, were self-implanted at normal incidence to various doses (1×1014 - 20×l014 cm-2) and then recrystallized at 600°C. An enhanced average grain diameter resulted after implantation and annealing, ranging from 0.10 to 2.0 μm (vs. the as-deposited 0.080 μm) and increasing with the implant dose. The grain size vs. implant dose behavior may be explained by a previously proposed stochastic model. An enhanced {110} texture was also observed after processing for implant doscs in the range 6×1014 - 14×1014 cm-2. The optimal dose was 11×1014 cm-2, for which the <110> directions were confined to within ±4° (vs. the as-deposited ±20°) of the surface normal. The overall results suggest a strong potential of SSIC in growing large-grain, restricted fibertextured polycrystalline Si thin films on amorphous insulators.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 163
Copyright
Copyright © Materials Research Society 1986

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References

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