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Epitaxial GaAs on Si: Progress and Potential Applications

Published online by Cambridge University Press:  28 February 2011

Don W. Shaw
Don W. Shaw*
Affiliation:
Materials Science LaboratoryTexas Instruments IncorporatedP.O. Box 655936,MS-147 Dallas,TX 75265
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Abstract

Recent successes, such as the demonstration of a 1K SRAM, have established epitaxial GaAs on Si substrates as a promising technology rather than a device designer's dream. For the first time we can seriously consider combining the individual electronic and optical properties of GaAs and Si within a single epitaxial structure. Applications for GaAs on Si range from those that simply utilize the Si as a low-cost, large-areapassive substrate with superior strength and thermal conductivity to the long-sought multifunction integrated circuits where Si and III–V components are integrated within a single monolithic chip. This paper will attempt to provide a realistic appraisal of the potential applications of epitaxial GaAs on Si with emphasis on the special demands imposed by each application and barriers that must be circumvented.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 15
Copyright
Copyright © Materials Research Society 1987

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