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Fabrication and Transport Properties of Te-Doped Bi Nanowire Arrays

Published online by Cambridge University Press:  21 March 2011

Y. M. Lin ,
X. Sun ,
S. B. Cronin ,
Z. Zhang ,
J. Y. Ying  and
M. S. Dresselhaus
Y. M. Lin
Affiliation:
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139
X. Sun
Affiliation:
Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139
S. B. Cronin
Affiliation:
Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139
Z. Zhang
Affiliation:
Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139
J. Y. Ying
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
M. S. Dresselhaus
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

Te-doped Bi nanowires with a 40 nm wire diameter have been successfully synthesized in anodic alumina templates by the pressure injection technique. Due to the unique semimetal-semiconductor transition that occurs in Bi nanowires, these systems exhibit a rather different temperature dependence in transport properties from their bulk counterparts. An improved theoretical model of this unique 1D nanowire system is developed based on the band structure of bulk bismuth. The temperature dependence of resistance for Bi nanowire arrays have been studied experimentally for various Te dopant concentrations and the results are compared with theoretical predictions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 582: Symposium H – Molecular Electronics , 1999 , H10.3
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Sun, X., Zhang, Z., and Dresselhaus, M. S., Appl. Phys. Lett. 74, 4005 (1999).Google Scholar
2. Hicks, L. D. and Dresselhaus, M. S., Phys. Rev. B 47, 16631 (1993).Google Scholar
3. Zhang, Z., Sun, X., Dresselhaus, M. S., Ying, J. Y., and Heremans, J., Appl. Phys. Lett. 73, 1589 (1998).Google Scholar
4. Zhang, Z., Sun, X., Dresselhaus, M. S., Ying, J. Y., and Heremans, J., Phys. Rev. B, in press.Google Scholar
5. Heremans, J. and Hansen, O. P., J. Phys. C: Solid State Phys. 12, 3483 (1979).Google Scholar
6. Zhang, Z., Ying, J. Y., and Dresselhaus, M. S., J. Mater. Res. 13, 1745 (1998).Google Scholar
7. Masuda, H. and Satoh, M., Science 268, 1466 (1995). H. Masuda and M. Satoh, Jpn. Appl. Phys. 35, 126 (1996).Google Scholar
8. Zhang, Z., Gekhtman, D., Dresselhaus, M. S., and Ying, J. Y., Chem. Mater. 11, 1659 (1999).Google Scholar
9. Isaacson, R. T. and Williams, G. A., Phys. Rev. 185, 682 (1969).Google Scholar
10. Lax, B. and Mavroides, J. G., in Advances in Solid State Physics, Vol. 11, (Academic Press, New York, 1960).Google Scholar
11. Gallo, C. F., Chandrasekhar, B. S., and Sutter, P. H., J. Appl. Phys. 34, 144 (1963).Google Scholar
12. Vecchi, M. P. and Dresselhaus, M. S., Phys. Rev. B 10, 771 (1974).Google Scholar