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Fabrication of Silicon Nitride Film using Pure Nitrogen Plasma Generated near Atmospheric Pressure for III-V Semiconductor Fabrication

Published online by Cambridge University Press:  01 February 2011

R. Hayakawa ,
T. Yoshimura ,
M. Nakae ,
T. Uehara ,
A. Ashida  and
N. Fujimura
R. Hayakawa
Affiliation:
Department of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University, 1–1 Gakuen-cho, Sakai, Osaka 599–8531, Japan, E-mail: fujim@ams.osakafu-u.ac.jp
T. Yoshimura
Affiliation:
Department of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University, 1–1 Gakuen-cho, Sakai, Osaka 599–8531, Japan, E-mail: fujim@ams.osakafu-u.ac.jp
M. Nakae
Affiliation:
Department of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University, 1–1 Gakuen-cho, Sakai, Osaka 599–8531, Japan, E-mail: fujim@ams.osakafu-u.ac.jp
T. Uehara
Affiliation:
Sekisui Chemical Co. LTD., 32 Wadai, Tsukuba, Ibaraki 300–4292, Japan
A. Ashida
Affiliation:
Department of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University, 1–1 Gakuen-cho, Sakai, Osaka 599–8531, Japan, E-mail: fujim@ams.osakafu-u.ac.jp
N. Fujimura
Affiliation:
Department of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University, 1–1 Gakuen-cho, Sakai, Osaka 599–8531, Japan, E-mail: fujim@ams.osakafu-u.ac.jp
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Abstract

Stable discharging of pure nitrogen can be maintained even at atmospheric pressure when alternative pulsed voltage is applied between two parallel plate electrodes. From optical emission spectroscopy, strong emissions from the N2 2nd positive system, weak emissions from N2 Herman's infrared system and N2 1st positive system were observed. The emission intensities from the N2 2nd positive system and the N2 Herman's infrared system increase with increasing the nitrogen gas pressure, whereas the emission intensities from the N2+ 1st negative system and N2 1st positive system decrease. The thickness of the silicon nitride film fabricated at 500 Torr was 1.6 nm at a nitridation temperature as low as 25°C, regardless of the nitridation temperature and nitridation time. From these results, we conclude that N2(C3IIu) plays an important role for the excellent reactivity of the nitrogen plasma generated near atmospheric pressure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E11.23
Copyright
Copyright © Materials Research Society 2005

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References

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