Hostname: page-component-cd9895bd7-jkksz Total loading time: 0 Render date: 2024-12-28T07:52:28.707Z Has data issue: false hasContentIssue false
  • English
  • Français

Formation and characterization of swelled nano-porous structures on ion-irradiated Ge surfaces

Published online by Cambridge University Press:  26 February 2011

Junichi Yanagisawa ,
Keiji Ogushi ,
Kentaro Takarabe ,
Kenji Gamo  and
Yoichi Akasaka
Junichi Yanagisawa
Affiliation:
yanagisawa@ee.es.osaka-u.ac.jp, Osaka University, Graduate School of Engineering Science, 1-3 Machikaneyama-cho, Toyonaka, Osaka, 560-8531, Japan, 81-6-6850-6302, 81-6-6850-6341
Keiji Ogushi
Affiliation:
ogushi@nano.ee.es.osaka-u.ac.jp, Osaka University, Japan
Kentaro Takarabe
Affiliation:
takarabe@nano.ee.es.osaka-u.ac.jp, Osaka University, Japan
Kenji Gamo
Affiliation:
kgamo@nict.go.jp, NICT, Japan
Yoichi Akasaka
Affiliation:
akasaka@ee.es.osaka-u.ac.jp, Osaka University, Japan
Get access

Abstract

Single crystal germanium (Ge) surfaces were irradiated with 100 keV Ga ions at room temperature at doses up to 3×1017 cm-2 and were observed by a scanning electron microscope (SEM) and an atomic force microscope (AFM). It is found that the Ga-irradiated regions swelled and nano-porous structures were formed on the surface after the Ga irradiation up to a dose of about 2×1017 cm-2, but the region was etched by the Ga irradiation for larger doses. The atomic composition of the swelled and etched surfaces was investigated by an Auger electron spectroscopy (AES), but no Ga signal was observed, indicating that the precipitation of Ga did not influence on these characteristics of the Ga-irradiated Ge surfaces. To investigate the water resistance of such nano-porous structures, the sample was dipped in water up to 10 hours, and the surface was observed using SEM and AFM. It is found that the swelled structures were maintained, but the etched region formed by larger-dose irradiation was partially peeled off. This indicates that the nano-porous structures can be used under water environments as a functional surface, such as filters, and deep etching can be performed by larger dose irradiations and dipping the sample in water.

Keywords

Geion-beam processingion-solid interactions
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 908: Symposium OO – Growth, Modification, and Analysis by Ion Beams at the Nanoscale , 2005 , 0908-OO11-04
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Wilson, I. H., J. Appl. Phys. 53, 1698 (1982).Google Scholar
2 Appleton, B. R., Holland, O. W., Narayan, J., Schow, O. E. III, Williams, J. S., Short, K. T. and Lawson, E., Appl. Phys. Lett. 41, 711 (1982).Google Scholar
3 Wang, L. M. and Birtcher, R. C., Appl. Phys. Lett. 55, 2494 (1989).Google Scholar
4 Bhatia, K. L., Singh, P., Kishore, N., Kanjilal, D. and Mehra, N. C., Philos. Mag. B 74, 751 (1996).Google Scholar
5 Ziegler, J. F., Biersack, J. P. and Littmark, U., The Stopping and Range of Ions in Solids (Pergamon, 1985).Google Scholar