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Formation of High Quality β-FeSi2 by Pre-Amorphization-Enhanced Diffusion

Published online by Cambridge University Press:  01 February 2011

Y. Murakami ,
A. Kenjo ,
T. Sadoh ,
T. Yoshitake  and
M. Miyao
Y. Murakami
Affiliation:
Department of Electronics, Kyushu University, 6–10–1 Hakozaki, Fukuoka 812–8581, Japan
A. Kenjo
Affiliation:
Department of Electronics, Kyushu University, 6–10–1 Hakozaki, Fukuoka 812–8581, Japan
T. Sadoh
Affiliation:
Department of Electronics, Kyushu University, 6–10–1 Hakozaki, Fukuoka 812–8581, Japan
T. Yoshitake
Affiliation:
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga 816–8580, Japan
M. Miyao
Affiliation:
Department of Electronics, Kyushu University, 6–10–1 Hakozaki, Fukuoka 812–8581, Japan
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Abstract

Effects of Ar+ ion irradiation on solid-phase growth of β-FeSi2 have been investigated. Si substrates were amorphized with Ar+ ions (20 keV) before Fe (15 nm) deposition to form Fe(15 nm)/a-Si/c-Si stacked structures. As a reference, Fe/c-Si stacked structures were prepared. In the initial stage of annealing at 800 °C, β-FeSi2 formation was enhanced for pre-amorphized samples, which was due to the enhanced diffusion of silicidation species. In the long time annealing, β-FeSi2 formation proceeded by thermal equilibrium diffusion, and the formation rate was not affected by pre-amorphization. Crystal quality of β-FeSi2 was improved by pre-amorphization. The pre-amorphization enhanced diffusion is useful for formation of high quality β-FeSi2 thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 792: Symposium R – Radiation Effects and Ion Beam Processing of Materials , 2003 , R9.16
Copyright
Copyright © Materials Research Society 2004

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References

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