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The Formation of Rugged Surface Polycrystalline Silicon Using Cl2/O2 Plasmas: The Role of Oxygen

Published online by Cambridge University Press:  25 February 2011

N. Ozawa ,
N. Ikegami ,
Y. Miyakawa  and
J. Kanamori
N. Ozawa
Affiliation:
VLSI R&D Center, Electronic Devices Group, OKI Electric Industry Co., Ltd, 550-1, Higashiasakawa, Hachioji, Tokyo193, Japan
N. Ikegami
Affiliation:
VLSI R&D Center, Electronic Devices Group, OKI Electric Industry Co., Ltd, 550-1, Higashiasakawa, Hachioji, Tokyo193, Japan
Y. Miyakawa
Affiliation:
VLSI R&D Center, Electronic Devices Group, OKI Electric Industry Co., Ltd, 550-1, Higashiasakawa, Hachioji, Tokyo193, Japan
J. Kanamori
Affiliation:
VLSI R&D Center, Electronic Devices Group, OKI Electric Industry Co., Ltd, 550-1, Higashiasakawa, Hachioji, Tokyo193, Japan
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Abstract

The formation of rugged surface polycrystalline silicon (poly-Si) using Cl2/O2 plasmas in which O2 concentration is 0-10 % has been investigated. Phosphorus doped poly-Si (n+ poly-Si) surface is rugged by the plasma etching under the condition that O2 concentration are 1-5 % at 10 Pa, but is not rugged at 1.3 Pa. On the other hand, undoped poly-Si surface is not rugged in Cl2 /0-10 %O2 plasmas at 10 Pa. Oxygen and phosphorus play an important role in the ruggedness of n+ poly-Si. The ruggedness mechanism has been investigated using scanning electron microscope, optical emission spectroscopy and mass spectrometry. The ruggedness mechanism is suggested that in Cl2 plasmas added a small amount of oxygen, n+ poly-Si is etched selectively at the grain boundaries which contain more phosphorus than in grains. The Cl emission intensity and n+ poly-Si etch rate reach maximum in Cl2/3 %O2 plasma at 1.3 Pa. Oxygen has a possibility of promoting SiCIx dissociation and increasing Cl radicals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 205
Copyright
Copyright © Materials Research Society 1992

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References

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