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Gate Current Suppressed Lateral FEAs with Integrated TFTs

Published online by Cambridge University Press:  10 February 2011

Moo-Sup Lim ,
Cheol-Min Park  and
Min-Koo Han
Moo-Sup Lim
Affiliation:
School of Electrical Engineering., Seoul National Univ., Seoul, 151-742, Korea
Cheol-Min Park
Affiliation:
School of Electrical Engineering., Seoul National Univ., Seoul, 151-742, Korea
Min-Koo Han
Affiliation:
School of Electrical Engineering., Seoul National Univ., Seoul, 151-742, KoreaPhone : +82-2-880-7248, Fax : +82-2-873-0827, E-mail : mkh@emlab.snu.ac.kr
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Abstract

Lateral FEAs which have three terminals, stable anode current, and suppressed gate current are proposed and fabricated. In order to eliminate the path of electrons between tips and anode, the proposed FEAs are sealed by evaporation of oxide while Molybdenium in our privious work. Experimental results such as controllibility of gate electrode, a portion of the gate current for the anode current, and stability of the anode current are given. The proposed FEAs exhibit an excellent controllibility by gate electrode and stability of the emission current. The gate current of new FEAs is negligible compared with the ande current while that of the privious FEAs is about 20% of the anode current.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 558: Symposium B – Flat-Panel Displays and Sensors-Principles, Materials… , 1999 , 143
Copyright
Copyright © Materials Research Society 2000

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References

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