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Gate-All-Around (GAA) Fully Depleted (FD) Cantilever Channel MOSFET with High-k Dielectric and Metal Gate

Published online by Cambridge University Press:  01 February 2011

Sagnik Dey ,
Se-Hoon Lee ,
Sachin V. Joshi ,
Prashant Majhi  and
Sanjay K. Banerjee
Sagnik Dey
Affiliation:
s-dey@ti.com, University of Texas at Austin, Electrical and Computer Engineering, Microelectronics Research Center,, 10100 Burnet Rd. Bldg, Austin, TX, 78758, United States, 512-471-8658, 512-471-5625
Se-Hoon Lee
Affiliation:
slee2@ece.utexas.edu, University of Texas at Austin, Electrical and Computer Engg, Austin, TX, 78758, United States
Sachin V. Joshi
Affiliation:
joshi@ece.utexas.edu, University of Texas at Austin, Electrical and Computer Engg, Austin, TX, 78758, United States
Prashant Majhi
Affiliation:
Prashant.Majhi@SEMATECH.Org, Sematech, Austin, TX, 78741, United States
Sanjay K. Banerjee
Affiliation:
banerjee@ece.utexas.edu, University of Texas at Austin, Electrical and Computer Engg, Austin, TX, 78758, United States
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Abstract

A MOSFET formed by a Si cantilever channel suspended between source/drain “anchors” wrapped all-around by high-κ dielectric and metal gate is demonstrated. The device shows excellent subthreshold characteristics and low leakage currents due to the fully depleted body and the gate-all-around architecture implemented with a high-κ dielectric and metal gate. At the same time this also allows a high drive current due to mobility enhancements arising from volume inversion of the cantilever channel such that a large ION/IOFF is achieved.

Keywords

microelectronicsHfnanoscale
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 995: Symposium G – Extending Moore's Law with Advanced Channel Materials , 2007 , 0995-G05-16
Copyright
Copyright © Materials Research Society 2007

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