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Ge Beam Treatment of Si Substrate for Molecular Beam Epitaxy

Published online by Cambridge University Press:  21 February 2011

Qian Cui ,
Xuekun Lu ,
Xing Wei ,
Yongliang Fan ,
Chi Sheng ,
Xiangjiu Zhang  and
Xun Wang
Qian Cui
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai 200433, China
Xuekun Lu
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai 200433, China
Xing Wei
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai 200433, China
Yongliang Fan
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai 200433, China
Chi Sheng
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai 200433, China
Xiangjiu Zhang
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai 200433, China
Xun Wang
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai 200433, China
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Abstract

A new surface cleaning method for Si MBE is described in which the Si surface is exposed to Ge beams while the substrate is kept at certain temperature. It has been proved that the thin passivation layer of SiO2 on the Si substrate will react with Ge at a relatively low temperature (620°C), and the products are volatile. The residual Ge on Si substrate can be reduced to less than 0.1 monolayer (ML). Ge beam treatment turns out to be an effective low temperature technique for preparing Si substrate, especially for the heteroepitaxial growth of GexSi1-x/Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 315: Symposium Y – Surface Chemical Cleaning and Passivation for Semiconductor Processing , 1993 , 111
Copyright
Copyright © Materials Research Society 1993

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References

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