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Ge Related Deep Level Luminescence in InGaAs Lattice Matched to InP

Published online by Cambridge University Press:  25 February 2011

S.S. Chandvankar ,
A.K. Srivastava ,
B.M. Arora  and
D.K. Sharma
S.S. Chandvankar
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay 400005, India
A.K. Srivastava
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay 400005, India
B.M. Arora
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay 400005, India
D.K. Sharma
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay 400005, India
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Abstract

Photoluminescence and Hall measurements are reported on Ge doped InGaAs layers lattice matched to InP. Ge doping of these samples results in highly compensated material, with the highest Ge content sample giving a p type conductivity with carrier concentration of 5 ×1017 cm-3. Low temperature PL spectra of these samples show a broad peak from 0.55 to 0.77 eV due to Ge. The peak of luminescence shifts to lower energy with increasing Ge content. The peak position shifts to higher energy with increasing excitation like in a D-A pair transition. The PL spectra have been explained on the basis of a model which assumes tail states near the band edges due to disorder produced by the presence of Ge in the lattice.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 203
Copyright
Copyright © Materials Research Society 1990

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