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Group III-Nitride Based VCSEL for Applications at the Wavelength of 400nm

Published online by Cambridge University Press:  17 March 2011

M. Linnik  and
A. Christou
M. Linnik
Affiliation:
Department of Materials and Nuclear Engineering and Materials Research Science and Engineering Center, University of Maryland, College Park MD 20742
A. Christou
Affiliation:
Department of Materials and Nuclear Engineering and Materials Research Science and Engineering Center, University of Maryland, College Park MD 20742
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Abstract

Short wavelength Vertical Cavity Surface Emitting Laser based on the group III nitrides, GaN, AlN, InN, and their ternary alloys is reported. Optical properties such as band gap and index of refraction of the nitride binary compound were calculated based on the fitting of the experimental data and the first principle calculations. The ternary alloy optical properties were determined in the same manner but based on the binary compound data. The active region containing InGaN strained multiple quantum wells is formed between two Distributed Bragg Reflectors. GaInN/AlN material systems are shown to be the most suitable for highly reflective Bragg mirrors with minimized number of layers. LiGaO2 substrate is proposed for GaN growth due to its small lattice mismatch with GaN (about 0.9%) and its ability to provide a good thermal matching between the two materials. We report VCSEL calculations on threshold current and emission spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G6.42
Copyright
Copyright © Materials Research Society 2001

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References

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