Hostname: page-component-6bf8c574d5-r8w4l Total loading time: 0 Render date: 2025-03-07T02:35:39.296Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth and Characterization Of GexSi1−x/ Si Multiple Quantum Well Structures

Published online by Cambridge University Press:  25 February 2011

D.W. Greve ,
R. Misra ,
M.A. Capano  and
T.E. Schlesinger
D.W. Greve
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
R. Misra
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
M.A. Capano
Affiliation:
Wright- Patterson AFB, Dayton, OH 45433
T.E. Schlesinger
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
Get access

Abstract

We report on the growth and characterization of multiple quantum well structures by UHV/ CVD epitaxy. X- ray diffraction is used to verify the expected layer periodicity and to determine the quantum well thickness. Photoluminescence measurements show peaks which we associate with recombination of excitons in the quantum wells. The measurements are consistent with high quality layers with small variation in quantum well thickness across a wafer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 365
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Meyerson, B.S., IBM J. Res. Dev. 34, 806 (1990).Google Scholar
2. Greve, D.W. and Racanelli, M., J. Electrochem. Soc. 138, 1744 (1991).Google Scholar
3. Patton, G.L., Comfort, J.H., Meyerson, B.S., Crabbd, E.F., Scilla, G.J., Frdsart, E. de, Stork, J.M.C., Sun, J. Y.-C., Harame, D.L., and Burghartz, J.N., IEEE Electron Device Letters EDL–11, 171 (1990).Google Scholar
4. Ismail, K., Meyerson, B.S., and Wang, P.J., Appl. Phys. Lett. 59, 973 (1991).Google Scholar
5. Zollner, S., Collins, R.T., Goorksy, M.S., Wang, P.J., Tejwani, M.J., Chu, J.O., and Meyerson, B.S., Paper 1678-08, SPIE 1992 Symposium on Compound Semiconductor Physics and Devices (March, 1992, Somerset, NJ).Google Scholar
6. Greve, D.W. and Racanelli, M., J. Vac. Sci. Technol. B8, 511 (1990).Google Scholar
7. Racanelli, M. and Greve, D.W., Journal of Metals 43 (10), pp. 32–37 (1991).Google Scholar
8. Davies, G., Phys. Reports R176, nos. 3 and 4 (1989).Google Scholar
9. Lang, D.V., People, R., Bean, J.C., and Sergent, A.M., Appl. Phys. Lett. 47, 1333 (1985).Google Scholar
10. Weber, J. and Alonso, M.I., Phys. Rev. B40, 5683 (1989).Google Scholar
11. Misra, R., Greve, D.W., and Schlesinger, T.E. (manuscript in preparation)Google Scholar
12. Greve, D.W., McLaughlin, G., Capano, M.A., and Racanelli, M., (submitted to Appl. Phys. Lett.).Google Scholar