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The Growth and Characterization of Large Diameter Silicon Carbide Substrates

Published online by Cambridge University Press:  21 March 2011

A. Gupta ,
M. Yoganathan ,
J. Burton ,
N. Byrd ,
A. Dimondi ,
S. Edwards ,
A. Giordana ,
J. Glesener ,
J. Harding  and
F. Long
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A. Gupta
Affiliation:
Electronic Materials GroupLitton Airtron200 E. Hanover AvenueMorris Plains, NJ 07950
M. Yoganathan
Affiliation:
Electronic Materials GroupLitton Airtron200 E. Hanover AvenueMorris Plains, NJ 07950
J. Burton
Affiliation:
Electronic Materials GroupLitton Airtron200 E. Hanover AvenueMorris Plains, NJ 07950
N. Byrd
Affiliation:
Electronic Materials GroupLitton Airtron200 E. Hanover AvenueMorris Plains, NJ 07950
A. Dimondi
Affiliation:
Electronic Materials GroupLitton Airtron200 E. Hanover AvenueMorris Plains, NJ 07950
S. Edwards
Affiliation:
Electronic Materials GroupLitton Airtron200 E. Hanover AvenueMorris Plains, NJ 07950
A. Giordana
Affiliation:
Electronic Materials GroupLitton Airtron200 E. Hanover AvenueMorris Plains, NJ 07950
J. Glesener
Affiliation:
Electronic Materials GroupLitton Airtron200 E. Hanover AvenueMorris Plains, NJ 07950
J. Harding
Affiliation:
Electronic Materials GroupLitton Airtron200 E. Hanover AvenueMorris Plains, NJ 07950
F. Long
Affiliation:
Electronic Materials GroupLitton Airtron200 E. Hanover AvenueMorris Plains, NJ 07950
W. Mitchel
Affiliation:
Air Force Research LaboratoryWright-Patterson AFB, OH 45433
A. Saxler
Affiliation:
Air Force Research LaboratoryWright-Patterson AFB, OH 45433
R. Sostak
Affiliation:
Electronic Materials GroupLitton Airtron200 E. Hanover AvenueMorris Plains, NJ 07950
J. Whitlock
Affiliation:
Electronic Materials GroupLitton Airtron200 E. Hanover AvenueMorris Plains, NJ 07950
R. N. Thomas
Affiliation:
Electronic Materials GroupLitton Airtron200 E. Hanover AvenueMorris Plains, NJ 07950
T. Anderson
Affiliation:
Electronic Materials GroupLitton Airtron200 E. Hanover AvenueMorris Plains, NJ 07950
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Abstract

Affordable, high quality SiC wafers are very desirable for a variety of new technologies including GaN based lighting, RF, and high-power electronics based on wide band gap materials. At Litton Airtron we have a major effort in the growth and characterization of SiC. We will present data on 35, 50 and 75-mm diameter crystals. We are growing both n-type, semiinsulating 4H, 6H, and 15R material. A variety of characterization techniques are being used at Litton Airtron to determine wafer quality. These include Raman microscopy, digital wafer photography, and crossed polarizer images. Raman spectroscopy is an excellent probe of polytype and carrier concentration for n-type materials; in addition it can be done at room temperature and is sufficiently fast that it can be used in an industrial environment. The use of digital photography allows for the collection of images that can be quantitatively analyzed and archived.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H5.2
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

[1] Balakrishna, V., Augustine, G., and Hopkins, R. H. in Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications-1999, edited by Binari, S. C., Burk, A. A., Melloch, M. R., and Nguyen, C., (Mater. Res. Soc. Proc. 572, Pittsburgh, PA, 1999) pp.245–252.Google Scholar
[2] Hobgood, H. McD., Glass, R. C., Augustine, G., Hopkins, R. H., Jenny, J., Skowronski, M., Mitchel, W. C., and Roth, M., Applied Physics Letters 66, 1364–1366 (1995).Google Scholar
[3] Schörner, R., Freidrichs, P., Peters, D., Stephani, D., IEEE Electron. Device Letters 20, 24–245 (1999).Google Scholar
[4] Feldman, D. W., Parker, J. H., Choyke, W. J., Patrick, L., Physical Rev. 173, 787–793 (1968).Google Scholar
[5] Burton, J. C., Sun, L., Long, F. H., Feng, Z. C., Ferguson, I. T., Journal of Applied Physics 84, 6268–6273 (1998).Google Scholar
[6] Stibal, R., Wickert, M., Hiesinger, P., Jantz, W., Materials Science and Engineering B66 (1999) 21–25.Google Scholar