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Growth and low temperature photoluminescence of silicon nanowires for different catalysts

Published online by Cambridge University Press:  31 January 2011

Olivier Demichel ,
Fabrice Oehler ,
Vincent Calvo ,
Pierre Noé ,
Adrien Besson ,
Nicolas Pauc ,
Pascal Gentile ,
Thierry Baron  and
Noël Magnea
Olivier Demichel
Affiliation:
olivier.demichel@cea.frolivier.demichel@gmail.com, CEA/INAC, SP2M, Grenoble, France
Fabrice Oehler
Affiliation:
fabrice.oehler@cea.fr, CEA/INAC, SP2M, Grenoble, France
Vincent Calvo
Affiliation:
vincent.calvo@cea.fr, CEA/INAC, SP2M, Grenoble, France
Pierre Noé
Affiliation:
pierre.noe@cea.fr, CEA/INAC, SP2M, Grenoble, France
Adrien Besson
Affiliation:
adrien.besson@cea.fr, CEA/INAC, SP2M, Grenoble, France
Nicolas Pauc
Affiliation:
nicolas.pauc@cea.fr, CEA/INAC, SP2M, Grenoble, France
Pascal Gentile
Affiliation:
pascal.gentile@cea.fr, CEA/INAC, SP2M, Grenoble, France
Thierry Baron
Affiliation:
thierry.baron@cea.fr, CNRS-LTM, Grenoble, France
Noël Magnea
Affiliation:
noel.magnea@cea.fr, CEA/INAC, SP2M, Grenoble, France
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Abstract

We report the growth of silicon nanowires (SiNWs) by chemical vapor deposition (CVD) with several catalysts. We performed low temperature photoluminescence (PL) experiments on as-grown SiNWs for the following catalysts: Au, Cu, TiSi, PdSi and PtSi. Nanowires are chemically treated with an aqua regia solution to remove the catalyst droplets, this step is followed by a thermal oxidation process. We compared the PL of as-grown and processed SiNWs for each catalyst.

Keywords

Sinanoscalechemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1178: Symposium AA – Semiconductor Nanowires–Growth, Size-Dependant Properties and Applications , 2009 , 1178-AA04-10
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES

1a) Wagner, R. S. Ellis, W. C. Appl. Phys. Lett. 1964, 4, 89. b) Wagner, R. S., Ellis, W. C., Arnold, S. M., Jackson, K. A., J. Appl. Phys. 1964 35, 2993.Google Scholar
2 Yu, J.Y. Chung, S.W. Heath, J. R. J. Phys. Chem. B 2000, 104, 11864.Google Scholar
3 Morales, A. M. Lieber, C. M. Science 1998, 279, 208.Google Scholar
4 Duan, X. Lieber, C. M. Adv. Mater. 2000, 12, 298.Google Scholar
5 Keldysh, L. in Proceedings of the 9th International Conference on the Physics of Semiconductors, Moscow, 1968 (Nauka, Leningrad, 1968), p. 1307.Google Scholar
6 Rice, T.M. et al. , Solid States of Physics (Academic press, New York, 1977), Vol. 32.Google Scholar
7 Demichel, O. et al. , Appl. Phys Lett. 93, 213104 (2008),Google Scholar
8 Demichel, O. et al. , Nano. Lett., 9, 2575 (2009).Google Scholar