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Growth and Structure of Microcrystalline Silicon by Reactive DC Magnetron Sputtering

Published online by Cambridge University Press:  21 February 2011

G. F. Feng ,
M. Katiyar ,
Y. H. Yang ,
J. R. Abelson  and
N. Maley
G. F. Feng
Affiliation:
Coordinated Science Laboratory and the Department of Materials Science and Engineering, University of Illinois, Urbana, IL 61801.
M. Katiyar
Affiliation:
Coordinated Science Laboratory and the Department of Materials Science and Engineering, University of Illinois, Urbana, IL 61801.
Y. H. Yang
Affiliation:
Coordinated Science Laboratory and the Department of Materials Science and Engineering, University of Illinois, Urbana, IL 61801.
J. R. Abelson
Affiliation:
Coordinated Science Laboratory and the Department of Materials Science and Engineering, University of Illinois, Urbana, IL 61801.
N. Maley
Affiliation:
Coordinated Science Laboratory and the Department of Materials Science and Engineering, University of Illinois, Urbana, IL 61801.
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Abstract

We have deposited microcrystalline silicon (μc-Si) at low temperature by reactive dc magnetron sputtering. The structure and crystallinity of the films are analyzed by in situ spectroscopie ellipsometry. μc-Si growth occurs at deposition conditions with substrate temperature between 150 – 300 °C and hydrogen partial pressure above 4 mtorr. We have also observed that the deposition rate strongly affects the interface structure. At a rate of 21 À/min, a 230 Å thick amorphous layer appears at the interface of film and glass substrate. The interface layer thickness decreases with deposition rate, and becomes undiscernible for growth rates ∼ 2 Å/min. The thickness of the interface layer is also found to depend on substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 179
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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