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Growth, Characterization and Spectroscopic Investigations of InI Crystals for Optical and Radiation Detector Applications

Published online by Cambridge University Press:  10 February 2011

K. C. Mandal ,
M. Klugerman ,
L. J. Cirignano ,
L. P. Moy ,
K. S. Shah ,
M. R. Squillante  and
R. N. Bhattacharyya
K. C. Mandal
Affiliation:
Radiation Monitoring Devices, Inc., 44 Hunt Street, Watertown, MA 02172
M. Klugerman
Affiliation:
Radiation Monitoring Devices, Inc., 44 Hunt Street, Watertown, MA 02172
L. J. Cirignano
Affiliation:
Radiation Monitoring Devices, Inc., 44 Hunt Street, Watertown, MA 02172
L. P. Moy
Affiliation:
Radiation Monitoring Devices, Inc., 44 Hunt Street, Watertown, MA 02172
K. S. Shah
Affiliation:
Radiation Monitoring Devices, Inc., 44 Hunt Street, Watertown, MA 02172
M. R. Squillante
Affiliation:
Radiation Monitoring Devices, Inc., 44 Hunt Street, Watertown, MA 02172
R. N. Bhattacharyya
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401
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Abstract

Single crystals of InI (Eg = 2.01 eV at 300K) have been grown by vertical Bridgman technique using zone refined (ZR) starting materials. The quality of the grown crystal has been evaluated by X-ray diffraction (XRD), Electron probe microanalysis (EPMA) and Photoelectron spectroscopy (XPS). Chemically etched crystal wafer has been used to fabricate optical and nuclear detectors. The results are presented in this paper.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 597
Copyright
Copyright © Materials Research Society 1998

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References

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