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Growth of Cubic GaN by MBE and Its Properties

Published online by Cambridge University Press:  10 February 2011

S. Yoshida ,
H. Okumura ,
G. Feuillet ,
P. Hacke  and
K. Balakrishnan
S. Yoshida
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305 Japan, syoshida@etl.go.jp
H. Okumura
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305 Japan, syoshida@etl.go.jp
G. Feuillet
Affiliation:
Commissariat a l’Energie Atomique, Centre de Grenoble, 17 rue des Matryrs, 38054 Grenoble, Cedex 9, France
P. Hacke
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305 Japan, syoshida@etl.go.jp
K. Balakrishnan
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305 Japan, syoshida@etl.go.jp
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Abstract

Molecular beam epitaxy (MBE) technique is a useful method to grow III-V nitrides, especially those having a metastable crystal structure, like cubic GaN (c-GaN), because of the capability of in situ observation of growing surfaces and its non-equilibrium growth mechanism. We have grown c-GaN on GaAs and 3C-SiC substrates by gas source MBE using dimethylhydrazine or activated nitrogen beam as an N source, and measured their luminescent and optical properties. This paper summarizes the MBE growth and properties of c-GaN, comparing with those of hexagonal one, and the control of the crystal structures is discussed in terms of growth method, orientation of substrate surfaces and growth conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 173
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Maruska, H.P. and Tietjen, J.J., Appl.Phys.Let. 15, p. 327 (1969).Google Scholar
2. Manasevit, H.M., Erdman, F.M., and Simpson, W.I., J.Electrochem.Soc. 118, 1864 (1971).Google Scholar
3. Pankove, J.I., Miller, E.A., and Berkeyheiser, J.E., RCA Rev. 32, p. 383 (1971).Google Scholar
4. Yoshida, S., Misawa, S. and Gonda, S., Appl.Phys.Lett. 42, p.427 (1983).Google Scholar
5. Amano, H., Sawaki, N., Akasaki, I. and Toyoda, Y., Appl.Phys.Lett. 48, p. 353 (1986).Google Scholar
6. Amano, H., Kito, M., Hiramatsu, K. and Akasaki, A., Jpn.J.Appl.Phys. 28, p.L2112 (1989).Google Scholar
7. Nakamura, S., Senoh, M. and Mukai, T., Jpn.J.Appl.Phys. 30, p.L1708 (1991).Google Scholar
8. Nakamura, S., Iwasa, N., Senoh, M. and Mukai, T., Jpn.J.Appl.Phys. 31, p. 1258 (1992).Google Scholar
9. Nakamura, S., Mukai, T., and Senoh, M., Appl.Phys.Lett. 64, p. 1687 (1994).Google Scholar
10. Akasaki, I., Amano, H., Sota, S., Sakai, H., Tanaka, T. and Koike, M., Jpn.J.Appl.Phys. 34, p.L1517 (1995), S. Nakamura, M. Senoh, S. Nagahara, N. Twasa, T. Yamada, T. Matsusita, H. Kiyoku and Y. Sugimoto, Jpn.J.AppI.Phys. 35, p.L74 (1996).Google Scholar
11. Vaudo, R.P., Goepfert, I.D., Moustakas, T.D., Beyea, D.M., Frey, T.J. and Meehan, K., J.Appl.Phys. 79, p.2779 (1996).Google Scholar
12. Mizuta, M., Fujieda, S., Matsumoto, Y. and Kawamura, T., Jpn.J.Appl.Phys. 25, p.L943 (1986).Google Scholar
13. Xie, Y., Qian, Y., Zhang, S., Wang, W., Liu, X. and Zhang, Y., Appl.Phys.Lett. 69, p. 334 (1996).Google Scholar
14. Ritter, E., J.Vac.Sci.Technol.. 3, p.225 (1966).Google Scholar
15. Yoshida, S., CRC Critical Rev. in Solid State and Material Science 11, p. 287 (1984).Google Scholar
16. Yoshida, S., Misawa, S. and Gonda, S., Appl.Phys.Lett. 26, p. 461 (1975).Google Scholar
17. Gotoh, H., Suga, T., Suzuki, H. and Kimata, M., Jpn.J.Appl.Phys. 20, p.L545 (1981).Google Scholar
18. Yoshida, S., Misawa, S. and Gonda, S., J.Appl.Phys. 53, p.6844 (1982).Google Scholar
19. Oberman, D.B., Lee, H., Gotz, W.K. and Harris, J.S. Jr., J.Crys.Growth 150, p. 912 (1995).Google Scholar
20. Okumura, H., Yoshida, S. and Sakuma, E., J.Cryst.Growth. 120, p. 114 (1992).Google Scholar
21. Okumura, H., Misawa, S., Okahisa, T. and Yoshida, S., J.Cryst. Growth 136, p.361 (1994).Google Scholar
22. Hong, C.H., Pavlidis, Hong, K., Wang, K. and Singh, J., Inst.Phys.Conf.Ser.No137, p.413 (1993).Google Scholar
23. Tsuchiya, H., Takeuchi, A., Kurihara, M. and Hasegawa, F., J.Cryst.Growth. 150, p.21 (1995).Google Scholar
24. Bharatan, S., Jones, K.S., Abernathy, C.R., Pearton, S.J., Ren, F., Wisk, P.W. and Lothian, J.R., J.Vac.Sci.Technol.. A 12, p. 1094 (1994), ibid. 13, p.716 (1995).Google Scholar
25. Powell, R.C., Lee, N.E. and Greene, J.E., Appl.Phys.Lett. 60, p.2505 (1992).Google Scholar
26. Kim, W., Salvador, A., Botchkarev, A.E., Aktas, O., Mohammad, S.N. and Morkoc, H., Appl. Phys.Lett. 69, p.559 (1996).Google Scholar
27. Moriyasu, Y., Goto, H., Kuze, N. and Matsui, M., J.Cryst.Growth. 150, p. 916 (1995).Google Scholar
28. Yang, Z., Li, L.K. and Wang, W.I., J.Vac.Sci.Technol.. B 14, p.2354 (1996).Google Scholar
29. Paisley, M.J., Sitar, Z., Posthill, J.B. and Davis, R.F., J.Vac.Sci.Technol.. A 7, p. 701 (1989).Google Scholar
30. Brandt, O., Yang, H., Jenichen, B., Suzuki, Y., Daweritz, L. and Ploog, K.H., Phys.Rev. B 52, p.R2253 (1995), Appl.Phys.Lett. 68, p.244 (1996).Google Scholar
31. Moustakas, T.D., Lei, T. and Molnar, R.J., Physica B 185, p. 36 (1993).Google Scholar
32. Botchkarev, A., Salvadlov, A., Myoung, J. and Morkoc, H., J.Appl.Phys. 77, p.4455 (1995).Google Scholar
33. Powell, R.C., Lee, N.-E., Kim, Y.-W. and Greene, J.E., J.Appl.Phys. 73, p. 189 (1993).Google Scholar
34. Feuillet, G., Hacke, P., Okumura, H. and Yoshida, S., Proc. of Intern. Symp. on Blue Laser and Light Emitting Diodes, (Chiba, March, 1996), Paper LN-4.Google Scholar
35. Hacke, P., Feuillet, G., Okumura, H. and Yoshida, S., Appl.Phys.Lett. 69, p. 2507 (1996).Google Scholar
36. Daweritz, L. and Hey, R., Surf.Sci. 236, p. 15 (1990).Google Scholar
37. Seifert, W. and Tempel, A., Phys.Stat.Sol. (a) 23, p.K39 (1974).Google Scholar
38. Okumura, H., Ohta, K., Feuillet, G., Barakrishnan, K., Chichibu, S., Hamaguchi, H., Hacke, P. and Yoshida, S., J.Cryst.Growth, to be published.Google Scholar
39. Van Hove, J.M., Cosimini, G.J., Nelson, E., Wowchak, A.M. and Chow, P.P., J.Cryst.Growth. 150, p.908 (1995).Google Scholar
40. Molnar, R.J. and Moustakas, T.D., J.Appl.Phys. 76, p. 4587 (1994).Google Scholar
41. Okumura, H., Misawa, S. and Yoshida, S., Appl.Phys.Lett. 59, p.1058 (1991).Google Scholar
42. Kuwano, N., Nagatomo, Y., Kobayashi, K., Oki, K., Miyoshi, S., Yaguchi, H., Onabe, K. and Shiraki, Y., Jpn.J.Appl.Phys. 33, p. 18 (1994).Google Scholar
43. Yoshida, S., Okumura, H., Misawa, S. and Sakuma, E., Surf.Sci. 267, p.50 (1992).Google Scholar
44. Jenkins, L.C., Cheng, T.S., Foxon, C.T., Hooper, S.E., Orton, J.W., Novikov, S.V. and Tret’yakov, V.V., J.Vac.Sci.Technol.. B 13, p. 1585 (1995).Google Scholar
45. Yang, J.W., Kuznia, J.N., Chen, Q.C., Khan, M.A., George, T., De Graef, M. and Mahajan, S., Appl. Phys.Lett. 67, p. 3759 (1995).Google Scholar
46. Yamaguchi, A.A., Manako, T., Sakai, A., Sunakawa, H., Kimura, A., Nido, M., and Usui, A., Jpn.J. Appl.Phys. 35, p.L873 (1996).Google Scholar
47. Cheng, T.S., Jenkins, L.C., Hooper, S.E., Foxon, C.T., Orton, J.W., and Lacklison, D.E., Appl.Phys. Lett. 66, p.1509 (1995).Google Scholar
48. Kikuchi, A., Hoshi, H. and Kishino, K., Jpn.J.Appl.Phys. 33, p.688 (1994).Google Scholar
49. Okumura, H., Ohta, K., Nagatomo, T., and Yoshida, S., J.Cryst.Growth. 164, p. 149 (1996).Google Scholar
50. Yoshida, S., Okumura, H., Okahisa, T. and Misawa, S., Inst.Phys.Conf.Ser.No137, p.377 (1994).Google Scholar
51. Feuillet, G., Hamaguchi, H., Ohta, K., Hacke, P., Okumura, H., and Yoshida, S., to be published in Appl.Phys.Lett.Google Scholar
52. Okumura, H., Balakrishnan, K., Feuillet, G., Ishida, Y., and Yoshida, S., MRS 1996 Fall Meeting.Google Scholar
53. Feuillett, G., Hacke, P., Okumura, H., Hamaguchi, H., Ohta, K. and Yoshida, S., MRS 1996 Fall Meeting.Google Scholar
54. Dingle, R., Sell, D.D., Stokowski, S.E. and Ilegems, M., Phys.Rev. B 4, p. 1211 (1971), R. Dingle and M. Ilegemes, Solid State Commun. 9, p. 175 (1971).Google Scholar
55. Strite, S., Ruan, J., Li, Z., Savador, S., Chen, H., Smith, D.J., Choyke, W.J. and Morkoc, H., J.Vac.Sci. Technol.B 9, p. 1924 (1991).Google Scholar
56. Okumura, H., Yoshida, S. and Okahisa, T., Appl.Phys.Lett. 64, p. 2997 (1994).Google Scholar
57. Liu, H., Frenkel, A.C., Kim, J.G., and Park, R.M., J.Appl.Phys. 74, p.6124 (1993).Google Scholar
58. Lambrecht, W.R.L. and Segall, B., MRS Proc. Vol.242, p.367 (1992).Google Scholar
59. Rubio, A., Corkill, J.C., Cohen, M.L., Shirley, E.L. and Louie, S.G., Phys.Rev.B 48, p. 11810 (1993).Google Scholar
60. Fan, W.J., Li, M.F., Chong, T.C. and Xia, J.B., J.Appl.Phys. 79, p. 188 (1996).Google Scholar
61. Ramirez-Flores, , Navarrow-Contreras, H., Lastras-Martinez, , Powell, R.C. and Greene, J.E., Phys.Rev.,B 50, p. 8433 (1994).Google Scholar
62. Hwang, S.J., Shan, W., Hauenstein, R.J., Song, J.J., Lin, M.-E, Strite, S., Sverdloy, B.N. and Morkoc, H., Appl.Phys.Lett. 64, p.2928 (1994).Google Scholar
63. Menninger, J., Jahn, U., Brandt, O., Yang, H., and Ploog, K., Phys.Rev.B 53, p. 1881 (1996).Google Scholar
64. Okumura, H., Ohta, K., Ando, K., Rule, W.W., Nagatomo, T. and Yoshida, S., Inst.Phys.Conf.Ser. No. 142, p. 939 (1996).Google Scholar
65. Klann, R., Brandt, O., Yang, H., Grahn, H.T. and Ploog, K., Phys.Rev. B 52, p.R11615 (1995).Google Scholar
66. Hong, C.H., Pavlidis, D., Brown, S.W. and Rand, S.C., J.Appl.Phys. 77, p.1705 (1995).Google Scholar