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Growth of Epitaxial Layers of GexSi1−x BY UHV/CVD

Published online by Cambridge University Press:  28 February 2011

Marco Racanelli  and
David W. Greve
Marco Racanelli
Affiliation:
Carnegie Mellon University, Department of Electrical and Computer Engineering, Schenley Park, Pittsburgh, PA 15213
David W. Greve
Affiliation:
Carnegie Mellon University, Department of Electrical and Computer Engineering, Schenley Park, Pittsburgh, PA 15213
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Abstract

Undoped epitaxial layers of GexSi1−x have been grown on (100) silicon substrates using the UHV/CVD technique. Epitaxial films were obtained at growth temperatures between 577 and 665 C. The growth rate and germanium content of the layers has been determined as a function of the germane flow and the deposition temperature. A bake at 800 C was found to be highly beneficial in reducing the defect density and improving the film roughness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 527
Copyright
Copyright © Materials Research Society 1990

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References

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