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The Growth of GaAs on Si by Molecular Beam Epitaxy

Published online by Cambridge University Press:  25 February 2011

S. M. Koch ,
S. J. Rosner ,
Darrell Schlom  and
J. S. Harris Jr.
S. M. Koch
Affiliation:
Stanford Electronics Lab, Stanford University, Stanford, CA 94305
S. J. Rosner
Affiliation:
Stanford Electronics Lab, Stanford University, Stanford, CA 94305 Hewlett-Packard Laboratories, Palo Alto, CA 94304
Darrell Schlom
Affiliation:
Stanford Electronics Lab, Stanford University, Stanford, CA 94305
J. S. Harris Jr.
Affiliation:
Stanford Electronics Lab, Stanford University, Stanford, CA 94305
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Abstract

Successful growth of GaAs on Si has recently been demonstrated. This work is directed toward an understanding of the processes occurring during the growth and their effects on the quality of the GaAs epilayers. Reflection High Energy Electron Diffraction monitoring of the growth in situ shows that the islands that are initially formed coalesce into an epilayer with a 2×4 surface reconstruction. Ion channeling indicates that the crystallinity of the entire epilayer improves with coverage. Substantial reordering of the material occurs when buffer layers grown at low temperatures are annealed at 575°C before and during further growth at this temperature. Comparison of 300 nm layers differing in the growth temperature of the first 100 nm shows no variation in the crystallinity as determined by ion channeling. Surface morphology degrades, however, and 77K photoluminescence intensity rises with the initial growth temperature. The optical and structural properties of 2μm thick films are also discussed.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 67: Symposium A – Heteroepitaxy on Silicon I , 1986 , 37
Copyright
Copyright © Materials Research Society 1986

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References

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