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Growth of Single-Walled Carbon Nanotubes on Surface with Controlled Structures

Published online by Cambridge University Press:  31 January 2011

Jin Zhang
Affiliation:
jinzhang@pku.edu.cn, Peking University, College of Chemistry and Molecular Enginerring, Beijing, China
Guo Hong
Affiliation:
hongguo-cnc@pku.edu.cn, Peking University, College of Chemistry and Molecular Enginerring, Beijing, China
Liming Xie
Affiliation:
xieliming@pku.edu.cn, Peking University, College of Chemistry and Molecular Enginerring, Beijing, China
Xuechun Yu
Affiliation:
yuxc-cnc@pku.edu.cn, Peking University, College of Chemistry and Molecular Enginerring, Beijing, China
Zhongfan Liu
Affiliation:
zfliu@pku.edu.cn, Peking University, College of Chemistry and Molecular Enginerring, Beijing, China
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Abstract

Due to their excellent properties, single-walled carbon nanotubes (SWNTs) have been regarded as one of the most potential materials for future applications in nanoelectronic devices. However, there is a huge gulf between production and applications. To meet the needs for applications, SWNTs' chirality, metallic/semiconducting property and morphology should be controlled in the growth process. Together with our recent works, we present herein a brief review on the growth of SWNTs on surface with controlled structures, including 1) Cap engineering for SWNTs growth with controlled chirality; 2) Reaction activity diversity induced growth of semiconducting SWNTs; and 3) Combination of two growth modes for fabricating SWNTs on surface with controlled morphology.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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