Hostname: page-component-745bb68f8f-lrblm Total loading time: 0 Render date: 2025-01-15T06:45:36.846Z Has data issue: false hasContentIssue false
  • English
  • Français

He+ ion damage in 4H-SiC studied by charge collection efficiency measurements.

Published online by Cambridge University Press:  01 February 2011

Roberta Nipoti  and
Cesare Donolato
Roberta Nipoti*
Affiliation:
CNR- IMM Sezione di Bologna, via Gobetti 101, I-40129 Bologna, Italy
Cesare Donolato
Affiliation:
CNR- IMM Sezione di Bologna, via Gobetti 101, I-40129 Bologna, Italy
*
#nipoti@bo.imm.cnr.it
Get access

Abstract

The nuclear microprobe facility of the Italian National Laboratories of Legnaro was used for an Ion Beam Induced Charge Collection (IBIC or IBICC) experiment which measured the charge collection of a 4H-SiC Schottky diode irradiated with 2 MeV He+ at increasing doses. The experiment was arranged so as to obtain a statistics of about 1400 events per each He+ ion from the 1st to the 500th one on the ion microprobe spot (1.5 × 1.5 μm2). These figures correspond to He+ fluence values in the range 107−1011 ions/cm2. The charge collection of the diode was almost constant from the 1st to the 10th He+ ion, i.e. up to a fluence of 109 ions/cm2, and then monotonically decreased for the subsequent ions. The SiC device collection efficiency was modelled by representing the electrical effects of the damage produced by ions as a planar interface region of given carrier recombination velocity at the depth of the damage peak. Experimental and computed data scale one to the other assuming that the interface recombination velocity and He+ fluence are linearly related.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 792: Symposium R – Radiation Effects and Ion Beam Processing of Materials , 2003 , R5.4
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nipoti, R., Donolato, C., Govoni, D., Rossi, P., Egeni, G.P., Rudello, V., “A study of the He+ ion induced damage in silicon by quantitative analysis of charge collection effciency data”, Nucl. Instr. and Meth. in Phys. Res. B 136–138, 1340 (1998).Google Scholar
2. Lee, K.K., Oshima, T., Saint, A., Kamiya, T., Jamieson, D.N., Itoh, H., “A comparative study of the radiation hardness of silicon carbide using light ions”, Nucl. Instr. and Meth. in Phys. Res. B 210, 489 (2003).Google Scholar
3. Nava, F., Vanni, P., Verzellesi, G., Castaldini, A., Cavallini, A., Polenta, L., Nipoti, R., Donolato, C., “Charge particle detection properties of epitaxial 4H-SiC Schottky diodes”, Materials Science Forum 353–356, 757 (2001).Google Scholar
4. Nava, F., Vittone, E., Vanni, P., Verzellesi, G., Fuochi, P.G., Lanzieri, C., Glaser, M., “Radiation tolerance of epitaxial silicon carbide detectors for electrons, protons and gamma-rays”, Nucl. Instr. and Meth. in Phys. Res. A 505, 645 (2003).Google Scholar
5. Grivickas, P., Martinez, A., Mikulskas, I., Grivickas, V., Tomašiunas, R., Linnors, J., Lindefelt, U., “Free Carrier diffusion in 4H-SiC”, Materials Science Forum 353–356, 353 (2001).Google Scholar