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Heteroepitaxial Nucleation and Growth of Ge ON Si(100) Surfaces Using Remote Plasma Enhanced Chemical Vapor Deposition

Published online by Cambridge University Press:  28 February 2011

R.A. Rudder ,
S.V. Hattangady ,
D.J. Vitkavage  and
R.J. Markunas
R.A. Rudder
Affiliation:
Center for Semiconductor Research, Research Triangle Institute, Research Triangle Park, NC 27709
S.V. Hattangady
Affiliation:
Center for Semiconductor Research, Research Triangle Institute, Research Triangle Park, NC 27709
D.J. Vitkavage
Affiliation:
Center for Semiconductor Research, Research Triangle Institute, Research Triangle Park, NC 27709
R.J. Markunas
Affiliation:
Center for Semiconductor Research, Research Triangle Institute, Research Triangle Park, NC 27709
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Abstract

Heteroepitaxial growth of Ge on Si(100) has been accomplished using remote plasma enhanced chemical vapor deposition at 300*#x00B0;C. Reconstructed surfaces with diffraction patterns showing non-uniform intensity variations along the lengths of the integral order streaks are observed during the first 100 Å of deposit. This observation of an atomically rough surface during the initial stages of growth is an indication of three-dimensional growth. As the epitaxial growth proceeds, the diffraction patterns become uniform with extensive streaking on both the integral and fractional order streaks. Subsequent growth, therefore, takes place in a layer-by-layer, two-dimensional mode. X-ray photoelectron spectroscopy of the early nucleation stages, less than 80 Å, show that there is uniform coverage with no evidence of island formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 519
Copyright
Copyright © Materials Research Society 1988

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