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High Deposition Rate of Microcrystalline Silicon for n-i-p Solar Cell by Using VHF PECVD Method

Published online by Cambridge University Press:  26 February 2011

Jun-Chin Liu ,
Chin-jeng Huang ,
Techi Wong ,
Jian-Shu Wu ,
Yih-Rong Luo  and
Chi-Lin Chen
Jun-Chin Liu
Affiliation:
TeChiWong@itri.org.tw, Industrial Technology Research Institute, Photovoltaics Technology Center, Rm.221, Bidg. 67, 195 Sec.4, Chung Hsing Rd. Chutung, Hsinchu, 310, Taiwan, 886-3-5917420, 886-3-5820383
Chin-jeng Huang
Affiliation:
CJ_Huanga@itri.org.tw, ITRI, Hsinchu, 310, Taiwan
Techi Wong
Affiliation:
TeChiWong@itri.org.tw, ITRI, PVTC, Hsinchu, 310, Taiwan
Jian-Shu Wu
Affiliation:
LittleTree@itri.org.tw, ITRI, Hsinchu, 310, Taiwan
Yih-Rong Luo
Affiliation:
YRLuo@itri.org.tw, ITRI, Hsinchu, 310, Taiwan
Chi-Lin Chen
Affiliation:
superlulu@itri.org.tw, ITRI, Hsinchu, 310, Taiwan
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Abstract

P doped, intrinsic, and n doped microcrystalline silicon (μc-Si) thin films were successfully synthesized on 10×10 cm2 transparent conductive oxide (TCO) /glass substrate by using a Very High Frequency Plasma Enhanced Chemical Vapor Deposition (VHF-PECVD, 80MHz) single chamber system. The crystal fraction of p and n type μc-Si:H with a thickness of 100nm was over 70% and 80%, respectively. Intrinsic μc-Si:H was deposited at a substrate temperature of 250°C with a high deposition rate over 1 nm/s. Photo-current/dark-current ratio of intrinsic μc-Si:H was higher than 102. The optimum cell initial efficiency of μc-Si:H single junction solar cell had been achieved 7.03 % so far.

Keywords

photovoltaicSithin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 974: Symposium CC – Solar Energy Conversion , 2006 , 0974-CC10-31
Copyright
Copyright © Materials Research Society 2007

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