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High Performance High Dielectric Constant Films Deposited by Dual Spectral Source Rapid Isothermal Assisted Metalorganic Chemical Vapor Deposition (MOCVD)

Published online by Cambridge University Press:  10 February 2011

Y. Chen ,
R. Singh ,
S. DeBoer  and
R.P.S. Thakur
Y. Chen
Affiliation:
Department of Electrical and Computer Engineering, Clemson University, Clemson, SC 29634
R. Singh
Affiliation:
Department of Electrical and Computer Engineering, and Material Science and Engineering Program, Clemson University, Clemson, SC 29634, singh@ces.clemson.edu
S. DeBoer
Affiliation:
Department of Electrical and Computer Engineering, Clemson University, Clemson, SC 29634
R.P.S. Thakur
Affiliation:
Micron Technology Inc., Boise, ID 83706
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Abstract

Dual spectral source assisted MOCVD is an ideal technique for the deposition of high dielectric constant materials as well as other electronic and optical materials. Tungsten halogen lamps and a deuterium lamp are used as the sources of optical and thermal energy. Ta2O5 films were deposited at 200°C for 30 minutes and annealed at 600°C for 30 minutes have shown leakage current densities as low as 10−10 A/ cm2 for gate voltage under 5V. To the best of our knowledge, these are the best results reported to date by other researchers. The high energy photons used in the in-situ cleaning and deposition process play an important role in obtaining high quality films of Ta2O5.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 470: Symposium F – Rapid Thermal and Integrated Processing IV , 1997 , 133
Copyright
Copyright © Materials Research Society 1997

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References

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