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High Quality Interfaces in a-Si:H/a-Sic:H Superlattices

Published online by Cambridge University Press:  25 February 2011

N. Bernhard ,
M. Kirsch ,
R. Eigenschenk ,
M. Bollu ,
C. Wetzel ,
F. Müller  and
R. Schwarz
N. Bernhard
Affiliation:
Technische Universität München, Physik-Department E16 D-8046 Garching, West Germany
M. Kirsch
Affiliation:
Technische Universität München, Physik-Department E16 D-8046 Garching, West Germany
R. Eigenschenk
Affiliation:
Technische Universität München, Physik-Department E16 D-8046 Garching, West Germany
M. Bollu
Affiliation:
Technische Universität München, Physik-Department E16 D-8046 Garching, West Germany
C. Wetzel
Affiliation:
Technische Universität München, Physik-Department E16 D-8046 Garching, West Germany
F. Müller
Affiliation:
Technische Universität München, Physik-Department E16 D-8046 Garching, West Germany
R. Schwarz
Affiliation:
Technische Universität München, Physik-Department E16 D-8046 Garching, West Germany
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Abstract

Amorphous multilayers with low interface defect density were deposited in an ultrahigh-vacuum RF-glow discharge reactor by computer-controlled fast gas switching. An extensive film characterization was done including determination of carbon content by PES (proton enhanced scattering), grazing-incidence X-ray diffraction, measurement of ambipolar diffusion length, FTIR spectroscopy and hydrogen effusion. From PDS (photothermal deflection spectroscopy) a defect density of below 1011 cm−2 per interface is found.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 237
Copyright
Copyright © Materials Research Society 1990

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References

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