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High Resistivity InAIN by Nitrogen or Oxygen Implantation

Published online by Cambridge University Press:  26 February 2011

J. C. Zolper ,
S. J. Pearton ,
C. R. Abernathy  and
C. B. Vartuli
J. C. Zolper
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–0603,
S. J. Pearton
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
C. R. Abernathy
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
C. B. Vartuli
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
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Abstract

We report on the isolation properties of In0.75Al0.25N implanted with either N or O for several doses and post-implant anneal temperatures. Sheet resistance versus anneal temperature data are reported for the various implants with a maximum sheet resistance of <1×109 Ω/□ achieved for a high dose N-implant annealed at 600 or 700 °C and <5×108 Ω/□ achieved for a high dose O-implant annealed at 600 °C. These sheet resistances correspond to a greater than three order of magnitude increase over the as-grown values. The compensating defect level for the highest resistance N-implanted sample has an estimate ionization level 580 meV below the conduction band edge. Implant isolation of InAIN is also compared to oxygen implant isolation of InxGa1-xN — where only a 50 to 100 fold increase in sheet resistance is observed — to study the effect of Al in the isolation scheme.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 485
Copyright
Copyright © Materials Research Society 1995

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References

1 Nakamura, S., Mukai, T., and Senoh, M., Appl. Phys. Lett., 64, 1687 (1994).Google Scholar
2 Akasaki, I., Amano, H., Kito, M., and Hiramatsu, K., J. Lumin. 48/49, 666 (1991).Google Scholar
3 Binari, S. C., Rowland, L. B., Kruppa, W., Kelner, G., Doverspike, K., and Gaskill, D. K., Electronics Lett., 30, 1248 (1994).Google Scholar
4 Kahn, M. A., Kuznia, J. N., Olsen, D. T., Schaff, W. J., Burm, J. W., and Shur, M. S., Appl. Phys. Lett., 65, 1121 (1994).Google Scholar
5 Chow, T. P. and Tyagi, R., IEEE Trans. Electron. Dev., 41, 1481 (1994).Google Scholar
6 Strite, S. and Morkoc, H., J. Vac. Sci. Technol. B 10, 1237 (1992).Google Scholar
7 Pankove, J. I. and Hutchby, J. A., J. Appl. Phys., 47, 5387 (1976).Google Scholar
8 Khan, M. A., Skogman, R. A., Schule, R. G., and Gershenzon, M., Appl. Phys. Lett., 42, 430 (1983).Google Scholar
9 Khan, M. A., Skogman, R. A., Schule, R. G., and Gershenzon, M., Appl. Phys. Lett., 43, 492 (1983).Google Scholar
10 Pearton, S. J., Abernathy, C. R., Wisk, P. W., Hobson, W. S., and Ren, F., Appl. Phys. Lett., 63, 1143(1993).Google Scholar
11 Zolper, J. C., Pearton, S. J., Abernathy, C. R., and Vartuli, C. B., Appl. Phys. Lett., in pressGoogle Scholar
12 Vartuli, C. B., Pearton, S. J., Abernathy, C. R., MacKenzie, J. D., and Zolper, J. C., submitted to J. Vac. Science and TechnologyGoogle Scholar
13 Pearton, S. J., Vartuli, C. B., Zolper, J. C., Yuan, C., and Stail, R. A., submitted to Appl. Phys. Lett.Google Scholar
14 Pearton, S. J., Iannuzzi, M. P., Reynolds, C. L. Jr., Peticolas, L., Appl. Phys. Lett., 52, 1540 (1989).Google Scholar
15 Zolper, J. C., Baca, A. G., and Chalmers, S. A., Appl. Phys. Lett., 62, 2536 (1993).Google Scholar
16 Zolper, J. C., Sherwin, M. E., Baca, A. G., and Schneider, R. P. Jr., J. Elec. Mat., 24, 21 (1995).Google Scholar
17 Abernathy, C. R., J. Vac. Sci. Technol. A, 11, 869 (1993).Google Scholar
18 Neugebauer, J. and Van de Walle, C. G., Phys. Rev. B, 50, 8067 (1994).Google Scholar
19 Ziegler, J. F., Biersack, J. P., Littmark, U., The Stopping and Range of Ions in Solids, vol. 1, (Pergamon Press, New York, 1985) p. 202.Google Scholar
20 Vartuli, C. B., et al., to be publishedGoogle Scholar
21 Wright, A. F. and Nelson, J. S., submitted to Appl. Phys. Lett.Google Scholar
22 Pearton, S. J., Abernathy, C. R., Panish, M. B., Hamm, R. A., and Lunardi, L. M., J. Appl. Phys., 66,656 (1989).Google Scholar
23 Pearton, S. J., Mat. Sci. Rep., 4, 313 (1991).Google Scholar