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High Resolution X-ray Diffraction and X-ray Topography Study of Gan on A12O3

Published online by Cambridge University Press:  10 February 2011

J. Chaudhuri ,
M. Hooe Ng ,
D. D. Koleske ,
A. E. Wickenden  and
R. L. Henry
J. Chaudhuri
Affiliation:
Wichita State University, Mechanical Engineering Department, Wichita, KS 67260-0133
M. Hooe Ng
Affiliation:
Wichita State University, Mechanical Engineering Department, Wichita, KS 67260-0133
D. D. Koleske
Affiliation:
Naval Research Laboratory, Code 6861, 4555 Overlook Avenue SW, Washington DC 20375.
A. E. Wickenden
Affiliation:
Naval Research Laboratory, Code 6861, 4555 Overlook Avenue SW, Washington DC 20375.
R. L. Henry
Affiliation:
Naval Research Laboratory, Code 6861, 4555 Overlook Avenue SW, Washington DC 20375.
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Abstract

High resolution x-ray diffraction and x-ray topography study of GaN thin films, grown on sapphire (00.1) substrate by reduced pressure metalorganic vapor phase epitaxy under various conditions, were performed. An attempt was made to correlate the mobility in films with similar carrier concentration with the strain and dislocation density. X-ray topography revealed the defects present in the film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 315
Copyright
Copyright © Materials Research Society 1998

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References

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