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High-Quality a-Si-Based Alloys : a-SiGe Films Fabricated in a Super Chamber and Superlattice Structure a-Si Films Prepared by a Photo-CVD Method

Published online by Cambridge University Press:  26 February 2011

Shinya Tsuda ,
Hisao Haku ,
Hisaki Tarui ,
Takao Matsuyama ,
Katsunobu Sayama ,
Yukio Nakashima ,
Shoichi Nakano ,
Michitoshi Ohnishi  and
Yukinori Kuwano
Shinya Tsuda
Affiliation:
SANYO Electric Co., Ltd. 1-18-13, Hashiridani, Hirakata City, Osaka, Japan
Hisao Haku
Affiliation:
SANYO Electric Co., Ltd. 1-18-13, Hashiridani, Hirakata City, Osaka, Japan
Hisaki Tarui
Affiliation:
SANYO Electric Co., Ltd. 1-18-13, Hashiridani, Hirakata City, Osaka, Japan
Takao Matsuyama
Affiliation:
SANYO Electric Co., Ltd. 1-18-13, Hashiridani, Hirakata City, Osaka, Japan
Katsunobu Sayama
Affiliation:
SANYO Electric Co., Ltd. 1-18-13, Hashiridani, Hirakata City, Osaka, Japan
Yukio Nakashima
Affiliation:
SANYO Electric Co., Ltd. 1-18-13, Hashiridani, Hirakata City, Osaka, Japan
Shoichi Nakano
Affiliation:
SANYO Electric Co., Ltd. 1-18-13, Hashiridani, Hirakata City, Osaka, Japan
Michitoshi Ohnishi
Affiliation:
Research Center, Applied Research Center, 1-18-13, Hashiridani, Hirakata City, Osaka, Japan
Yukinori Kuwano
Affiliation:
SANYO Electric Co., Ltd. 1-18-13, Hashiridani, Hirakata City, Osaka, Japan
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Abstract

In order to improve the conversion efficiency of a-Si solar cells, high-quality a-Si based alloys of both narrow handgap and wide bandgap were studied.

Concerning the narrow bandgap material, we found a particular dependence of film qualities on substrate temperature. In addition, high-quality a-SiGe:H films were obtained by using a super chamber (separated ultra-high vacuum reaction chamber).

As for the high-quality wide bandgap material, a-Si/a-SiC superlattice structure films fabricated by a photo-CVD method were studied for the first time. From the analysis of their properties, we found that the superlattice structure p-layer was an active layer for photovoltaic effect. A conversion efficiency of 11.2% has been obtained for a pin a-Si solar cell whose player was of the superlattice structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 311
Copyright
Copyright © Materials Research Society 1987

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References

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5) Tsuda, S. et al.: J. Non-Cryst. Solids 77&78 (1985) 845 Google Scholar
6) Tsuda, S. et al.: Jpn. J. Appl. Phys. 26 (1987) 28 Google Scholar