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Hole Drift Mobility in a-Si1−xCx:H

Published online by Cambridge University Press:  16 February 2011

Qing Gu ,
Qi Wang ,
E. A. Schiff ,
Yuañ-Min Li  and
Charles T. Malone
Qing Gu
Affiliation:
Department of Physics, Syracuse University, Syracuse, NY 13244–1130, USA
Qi Wang
Affiliation:
Department of Physics, Syracuse University, Syracuse, NY 13244–1130, USA
E. A. Schiff
Affiliation:
Department of Physics, Syracuse University, Syracuse, NY 13244–1130, USA
Yuañ-Min Li
Affiliation:
Solarex Corp., Thin Film Division, 826 Newtown-Yardley Rd., Newtown, PA 18940, USA
Charles T. Malone
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802, USA
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Abstract

We present a summary of our recent measurements on hole drift mobilities in hydro-genated amorphous silicon-carbon alloys (a-Si1−xCx:H). Increasing the bandgap has a vastly smaller effect for the hole mobility than for electrons. In conjunction with previous drift Mobility Measurements in a-Si1−xCx:H and a-Si1−xGex:H, these hole measurements complete a simple pattern for the effects of bandgap modification on drift Mobilities: electron mobilities decline as the bandgap is increased beyond 1.72 eV or decreased below 1.72 eV, but hole mobilities are relatively unaffected.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 523
Copyright
Copyright © Materials Research Society 1994

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References

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