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Hydrogen Diffusion and Passivation in InGaAIN Alloys

Published online by Cambridge University Press:  26 February 2011

S. J. Pearton ,
C. R. Abernathy ,
J. D. MacKenzie ,
C. B. Vartuli ,
R. G. Wilson ,
J. M. Zavada  and
R. J. Shul
S. J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
C. R. Abernathy
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
J. D. MacKenzie
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
C. B. Vartuli
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
R. G. Wilson
Affiliation:
Hughes Research Laboratories, Malibu CA 90265
J. M. Zavada
Affiliation:
US Army Research Office, Research Triangle Park NC 27709
R. J. Shul
Affiliation:
Sandia National Laboratories, Albuquerque NM 87185
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Abstract

Hydrogen is found to readily diffuse into InGaN, InAIN and InGaAIN epitaxial layers during plasma exposures at 170 – 250 °C for 40 sec - 30 min. The diffusivity of hydrogen is > 10−11 cm2-s−1 at 170 °C, and the native donor species are passivated by association with the hydrogen. Reactivation of these species occurs at 450–500°C, but the hydrogen remains in the material until ≥ 800 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 497
Copyright
Copyright © Materials Research Society 1995

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