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Hydrogenated Amorphous Silicon Alloyed with Selenium

Published online by Cambridge University Press:  10 February 2011

Shenlin Chen ,
P. C. Taylor  and
J. M. Viner
Shenlin Chen
Affiliation:
University of Utah, Department of Physics, 115 S 1400 E RM 201, Salt Lake City, UT 84112-0830
P. C. Taylor
Affiliation:
University of Utah, Department of Physics, 115 S 1400 E RM 201, Salt Lake City, UT 84112-0830
J. M. Viner
Affiliation:
University of Utah, Department of Physics, 115 S 1400 E RM 201, Salt Lake City, UT 84112-0830
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Abstract

Hydrogenated amorphous silicon alloyed with selenium has been made by plasma enhanced chemical vapor deposition (PECVD). The activation energy for electrical conduction is essentially unchanged for selenium concentrations < 1 at.%. The photo conductivity changes for selenium concentrations > 0.5 at. %. Photothermal deflection spectroscopy (PDS) and electron spin resonance (ESR), respectively, show that the width of the valence band tail states and the density of neutral silicon dangling bonds also change for selenium concentrations > 0.5 at. %.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 459
Copyright
Copyright © Materials Research Society 1998

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References

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