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Impact of Manganese incorporation on the structural and magnetic properties of MOCVD-grown Ga1−xMnxN

Published online by Cambridge University Press:  01 February 2011

Matthew H. Kane ,
Ali Asghar ,
Martin Strassburg ,
Qing Song ,
Adam M. Payne ,
Christopher J. Summers ,
Z. John Zhang ,
Nikolaus Dietz  and
Ian T. Ferguson
Matthew H. Kane
Affiliation:
Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, GA 30332, U.S.A.*ianf@ece.gatech.edu Georgia Institute of Technology, School of Materials Science and Engineering, Atlanta, GA 30332, U.S.A.*ianf@ece.gatech.edu
Ali Asghar
Affiliation:
Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, GA 30332, U.S.A.*ianf@ece.gatech.edu
Martin Strassburg
Affiliation:
Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, GA 30332, U.S.A.*ianf@ece.gatech.edu Georgia State University, Department of Physics and Astronomy, Atlanta, GA 30303, U.S.A.*ianf@ece.gatech.edu
Qing Song
Affiliation:
Georgia Institute of Technology, School of Chemistry and Biochemistry, Atlanta, GA 30332, U.S.A.*ianf@ece.gatech.edu
Adam M. Payne
Affiliation:
Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, GA 30332, U.S.A.*ianf@ece.gatech.edu
Christopher J. Summers
Affiliation:
Georgia Institute of Technology, School of Materials Science and Engineering, Atlanta, GA 30332, U.S.A.*ianf@ece.gatech.edu
Z. John Zhang
Affiliation:
Georgia Institute of Technology, School of Chemistry and Biochemistry, Atlanta, GA 30332, U.S.A.*ianf@ece.gatech.edu
Nikolaus Dietz
Affiliation:
Georgia State University, Department of Physics and Astronomy, Atlanta, GA 30303, U.S.A.*ianf@ece.gatech.edu
Ian T. Ferguson
Affiliation:
Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, GA 30332, U.S.A.*ianf@ece.gatech.edu
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Abstract

This paper reports the impact of the Mn incorporation on the structural and magnetic properties of Ga1−xMnxN on the metal-organic vapor phase deposition (MOCVD). Crystalline quality and phase purity were determined by high-resolution X-ray diffraction and indicated that no macroscopic second phases are formed during growth. Atomic force microscopy revealed a 2-dimensional MOCVD step-flow growth pattern in the Mn-incorporated samples. Various annealing steps were applied to some of the samples to reduce compensating defects and to investigate the effects of post processing on the growth. SQUID measurements showed an apparent ferromagnetic hysteresis behavior. However, none of the requirements for room temperature ferromagnetism in the prevailing mean field DMS theories were found. Therefore, different origins of the ferromagnetic signal are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E9.4
Copyright
Copyright © Materials Research Society 2005

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References

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