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Improvement of Surface Crystalline Quality of an Epitaxial (100)ZrN Film as a Bottom Electrode Diffusion Barrier for Ferroelectric Capacitors

Published online by Cambridge University Press:  17 March 2011

Susumu Horita ,
Sadayoshi Horii  and
Takeo Toda
Susumu Horita
Affiliation:
Japan Advanced Institute of Science and Technology, Ishikawa, JAPAN
Sadayoshi Horii
Affiliation:
Delegated from Kokusai Electric Co., Ltd, Toyama, JAPAN
Takeo Toda
Affiliation:
Japan Advanced Institute of Science and Technology, Ishikawa, JAPAN
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Abstract

We fabricated the double epitaxial layers of Ir on barrier metal ZrN for Pb(ZrxTi1−x)O3 (PZT), using reactive sputtering. In order to remove the surface oxide layer of the ZrN film prior to depositing the Ir film, we used a new treatment method, in which the ZrN film is dipped into a 0.5% buffered HF solution for less than 30 seconds and then immediately dipped into a hydrazine (N2H4) monohydrate solution for 60 seconds. Also, in order to suppress the generation of twin boundaries and to improve crystalline quality, the ZrN film is deposited using a two-step method, which consists of an initial high temperature deposition step at 850s°C followed by a lower temperature step at 600°C. On the ZrN film prepared by these methods, we can obtain a mainly (110)-oriented epitaxial Ir film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 688: Symposium C – Ferroelectric Thin Films X , 2001 , C4.24.1
Copyright
Copyright © Materials Research Society 2002

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