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In Situ Design of Experiments for A Reactive Ion Etching Process

Published online by Cambridge University Press:  10 February 2011

Cecilia G. Galarza ,
Pete Klimecky ,
Pramod P. Khargonekar  and
Fred L. Terry Jr.
Cecilia G. Galarza
Affiliation:
Electrical Engineering and Computer Science Department University of Michigan, Ann Arbor, MI 48109-2122
Pete Klimecky
Affiliation:
Electrical Engineering and Computer Science Department University of Michigan, Ann Arbor, MI 48109-2122
Pramod P. Khargonekar
Affiliation:
Electrical Engineering and Computer Science Department University of Michigan, Ann Arbor, MI 48109-2122
Fred L. Terry Jr.
Affiliation:
Electrical Engineering and Computer Science Department University of Michigan, Ann Arbor, MI 48109-2122
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Abstract

We introduce a new procedure to perform a design of experiments (DOE) for plasma etching processes. In particular, we use in situ etch rate estimations to maximize the number of observable setpoints during a single run of the etching process. This procedure is applied to characterize the spatial uniformity of a plasma chamber used in the manufacturing of flat panel displays.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 569: Symposium U – In Situ Process Diagnostics and Modelling , 1999 , 165
Copyright
Copyright © Materials Research Society 1999

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References

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